Effect of Pad Pore Size and Applied Pressure on Environmentally Friendly Buff Cleaning Using Gas-Dissolved Water for Ceria Nanoparticle Removal

This study investigates an environmentally friendly buff cleaning technique aimed at removing ceria nanoparticles remaining after chemical mechanical planarization (CMP), a critical step in semiconductor fabrication where post-cleaning is essential to prevent yield loss caused by particle contamination. Gas-dissolved water (GDW), prepared by dissolving CO₂ or N₂ into DI water, was utilized to generate micro-and nanobubbles that assist in particle detachment through physical interaction and electrostatic attraction. Among the tested conditions, CO₂ GDW demonstrated superior cleaning performance due to its higher bubble density and enhanced interfacial activity. Additionally, the use of larger-pore polyurethane pads and low-pressure conditions further improved cleaning efficiency by promoting fluid exchange and sustaining bubble–particle interactions. These findings highlight the potential of GDW as a safe, effective, and sustainable alternative to conventional chemical-based post-CMP cleaning solutions.

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Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2026-10-29
DOI
https://doi.org/10.4028/p-0uuzs4
Primary Topic
Advanced Surface Polishing Techniques
Type
article
Field-Weighted Citation Impact
0.00
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article

Effect of Pad Pore Size and Applied Pressure on Environmentally Friendly Buff Cleaning Using Gas-Dissolved Water for Ceria Nanoparticle Removal

Yuna Nam, Taesung Kim, Sanghuck Jeon, Yoojin Son et al.
4 links
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Advanced Surface Polishing Techniques
article

Effect of Pad Pore Size and Applied Pressure on Environmentally Friendly Buff Cleaning Using Gas-Dissolved Water for Ceria Nanoparticle Removal

Yuna Nam, Taesung Kim, Sanghuck Jeon, Yoojin Son, Pengzhan Liu
article en

Abstract

This study investigates an environmentally friendly buff cleaning technique aimed at removing ceria nanoparticles remaining after chemical mechanical planarization (CMP), a critical step in semiconductor fabrication where post-cleaning is essential to prevent yield loss caused by particle contamination. Gas-dissolved water (GDW), prepared by dissolving CO₂ or N₂ into DI water, was utilized to generate micro-and nanobubbles that assist in particle detachment through physical interaction and electrostatic attraction. Among the tested conditions, CO₂ GDW demonstrated superior cleaning performance due to its higher bubble density and enhanced interfacial activity. Additionally, the use of larger-pore polyurethane pads and low-pressure conditions further improved cleaning efficiency by promoting fluid exchange and sustaining bubble–particle interactions. These findings highlight the potential of GDW as a safe, effective, and sustainable alternative to conventional chemical-based post-CMP cleaning solutions.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 395
Samsung Electronics (South Korea) (KR), Sungkyunkwan University (KR)
Responsible consumption and production, Clean water and sanitation
Openalex Percentile: Top 25%
Advanced Surface Polishing Techniques
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