Effect of Pad Pore Size and Applied Pressure on Environmentally Friendly Buff Cleaning Using Gas-Dissolved Water for Ceria Nanoparticle Removal
This study investigates an environmentally friendly buff cleaning technique aimed at removing ceria nanoparticles remaining after chemical mechanical planarization (CMP), a critical step in semiconductor fabrication where post-cleaning is essential to prevent yield loss caused by particle contamination. Gas-dissolved water (GDW), prepared by dissolving CO₂ or N₂ into DI water, was utilized to generate micro-and nanobubbles that assist in particle detachment through physical interaction and electrostatic attraction. Among the tested conditions, CO₂ GDW demonstrated superior cleaning performance due to its higher bubble density and enhanced interfacial activity. Additionally, the use of larger-pore polyurethane pads and low-pressure conditions further improved cleaning efficiency by promoting fluid exchange and sustaining bubble–particle interactions. These findings highlight the potential of GDW as a safe, effective, and sustainable alternative to conventional chemical-based post-CMP cleaning solutions.
Authors
- Yuna Nam
- Taesung Kim (ORCID: https://orcid.org/0000-0001-6280-7668)
- Sanghuck Jeon
- Yoojin Son
- Pengzhan Liu
Institutions
- Samsung Electronics (South Korea) (KR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2026-10-29
- DOI
- https://doi.org/10.4028/p-0uuzs4
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00