Dopant-Enhanced Polarization in ReS2 Field-Effect Transistor

Abstract Optical polarization provides an additional degree of freedom for photonic communication, yet its electrical readout requires photodetectors with strong in-plane anisotropy. Here we identify Pt through first-principles screening as a candidate for enhancing the in-plane anisotropy of ReS2. Calculations for the proposed S-site substitution model predict directional orbital hybridization and anisotropic band reconstruction. ReS2 field-effect transistors with 0.93 at. % Pt exhibit polarization-dependent current anisotropic ratios up to 16, compared with 1.45 for pristine devices. Pt incorporation also reduces the contact resistance to 0.85 kΩ·μm, accompanied by lower thermionic and tunneling barriers. Device-calibrated proof-of-concept simulations demonstrate polarization-dependent image decoding, with the peak signal-to-noise ratio increasing from 12.2 to 37.3 dB as the number of states per RGB channel increases from 2 to 10. These findings provide a route toward compact and integrated polarization-sensitive optoelectronic devices.