A Novel RMG pWFM Molybdenum Patterning for sub-10nm DRAM Periphery FinFET Platform
We report the wet etch rate difference and device impact between pure metal Molybdenum and metal-nitride complex Molybdenum Nitride and Titanium Nitride. We discuss the wet etch results of acidic and alkaline solutions without oxidant to Molybdenum. We report that Molybdenum can be etched by ozonated water with different concentrations. Finally, we demonstrate p-type work function metal Mo patterning with ozonated water on Ring Oscillator device.
Authors
- Jan Willem Maes (ORCID: https://orcid.org/0009-0009-4477-778X)
- Hiroaki Arimura (ORCID: https://orcid.org/0000-0002-3138-708X)
- Ju-Geng Lai (ORCID: https://orcid.org/0000-0002-2794-8016)
- Jishnu Ganguly
- Stephan Brus
- Elena Capogreco (ORCID: https://orcid.org/0000-0003-3610-3629)
- Harsh Vardhan Bana (ORCID: https://orcid.org/0000-0003-0722-1319)
- Naoto Horiguchi (ORCID: https://orcid.org/0000-0001-5490-0416)
- Ritam Sarkar (ORCID: https://orcid.org/0000-0001-7753-4658)
Institutions
- IMEC (BE)
- ASM International (Belgium) (BE)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2026-10-29
- DOI
- https://doi.org/10.4028/p-eajk20
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission
- Vlaamse regering
- HORIZON EUROPE Framework Programme