基于赵付涛物质记忆元公理的多晶相体系光致记忆构型与长余辉机理研究

The microscopic mechanism of long-afterglow luminescence has long relied on auxiliary constructive concepts such as carrier migration, trap level filling, and detrapping relaxation to achieve curve fitting, and its physical image has the theoretical redundancy of "phenomena can be fitted, but entities cannot be directly measured". Based on the underlying paradigm of "motion is memory, configuration is retention" of Zhao Futao's Material Memory Element Axiom (FT-MMT), this paper establishes a pure valence electron microscopic image that completely does not rely on carriers, defect traps, and non-radiative recombination centers. Under the conventional working conditions in the reference domain, when the polycrystalline phase mixed system is excited by light, the valence electrons of each grain absorb photon energy to produce spatial extension of the wave function, break through the local confinement of a single molecule, form orbital overlap and intermolecular tunneling exchange at the grain boundary interface, and construct a dynamic ordered configuration of quasi-periodic reciprocating rearrangement of valence electrons; the excited state ordered motion configuration is the photo-induced material memory defined by the FT-MMT system. After the external light field is removed, lattice scattering and interface defect scattering form inherent dissipation resistance, the order degree of valence electron cross-domain motion gradually attenuates, the memory configuration relaxes slowly and dissipates gradually, which macroscopically corresponds to the exponential decay behavior of long afterglow. The "trap effect" defined in classical physics does not correspond to an independent energy level structure or energy storage entity under the framework of this system, but is the delayed retention phenomenon of material memory and the macroscopic appearance of relaxation hysteresis of excited state electron motion configuration. According to Occam's razor principle, this model completely explains the whole process of afterglow excitation, retention and attenuation with the continuous physical chain of "wave function extension - interface coupling - intermolecular rearrangement - natural dissipation", greatly reduces the additional assumptions of the classical model, and maintains the self-consistency of energy conservation: all energy injection, retention and dissipation only belong to the configuration evolution of valence electron wave function and the intrinsic scattering dissipation of the system, and there is no need to add an independent energy storage unit. This study clearly defines the applicable boundary of the model and does not deny the engineering applicability of classical semiconductors and luminescence physics. It only proves that within the polycrystalline phase mixed system and the conventional environment in the reference domain of this paper, carriers and traps are not necessary explanatory variables. It can provide a new self-consistent theoretical path for the research of memristor optical memory effect, long-afterglow functional materials, and condensed matter memory physical properties. 长余辉发光的微观机理长期依赖载流子迁移、陷阱能级填充、脱陷弛豫等辅助构造性概念实现曲线拟合,其物理图像存在“现象可拟合、实体不可直测”的理论冗余。本文基于赵付涛物质记忆元公理(FT‑MMT)“运动即记忆、构型即留存”的底层范式,建立一套完全不依赖载流子、缺陷陷阱、非辐射复合中心的纯价电子微观图像。 在基准域常规工况下,多晶相混合体系受光激励时,各晶粒价电子吸收光子能量产生波函数空间延展,突破单分子局域束缚,在晶界界面形成轨道重叠与跨分子隧穿互换,构建价电子准周期往复重排的动态有序构型;该激励态有序运动构型,即为FT‑MMT体系定义的光致物质记忆。撤去光照外场后,晶格散射、界面缺陷散射形成固有耗散阻力,价电子跨域运动有序度逐步衰减,记忆构型缓慢弛豫、逐步耗散,宏观对应长余辉指数衰减行为。 经典物理中定义的“陷阱效应”,在本体系框架下不对应独立能级结构或储能实体,而是物质记忆的延迟留存现象,是激发态电子运动构型弛豫滞后的宏观表象。依据奥卡姆剃刀原则,本模型以“波函数延展—界面耦合—跨分子重排—自然耗散”的连续物理链条完整解释余辉激发、持留与衰减全过程,大幅精简经典模型的附加假设,保持能量守恒自洽:全部能量注入、留存与耗散仅归属于价电子波函数构型演化与体系本征散射耗散,无需增设独立储能单元。 本研究明确模型适用边界,不否定经典半导体与发光物理的工程适用性,仅证明:在本文多晶相混合体系、基准域常规环境内,载流子与陷阱不属于必要解释变量。可为忆阻器光记忆效应、长余辉功能材料、凝聚态记忆物性研究提供全新自洽理论路径。