CFET RMG Dual Work Function Metal Patterning with Sacrificial Layer for Nanosheets Pinch-Off
We reported the process flow and challenges of dual work function metal patterning between different work function metal thicknesses and gate lengths to monolithic Complementary FET. To resolve the dilemma of spin-on-carbon hard mask fill and nanosheet pinch-off, we propose integrating sacrificial gap-closure layers and isotropic etches to dual work function metal patterning. We prove that the sacrificial layers can be removed with high selectivity to work function metal in wet etch chemistry. We report the controllable wet etch rate of the sacrificial layers by concentrations and temperatures. Finally, we first demonstrate dual work function metal patterning with a sacrificial layer and isotropic etch step by step on a monolithic Complementary FET test vehicle.
Authors
- Hiroaki Arimura (ORCID: https://orcid.org/0000-0002-3138-708X)
- Ju-Geng Lai (ORCID: https://orcid.org/0000-0002-2794-8016)
- Violeta Georgieva (ORCID: https://orcid.org/0000-0001-5770-1770)
- Efrain Altamirano Sánchez (ORCID: https://orcid.org/0000-0003-3235-6055)
- Camila Toledo de Carvalho Cavalcante
- Naoto Horiguchi (ORCID: https://orcid.org/0000-0001-5490-0416)
- Dmitry Batuk (ORCID: https://orcid.org/0000-0002-6384-6690)
- A. Mingardi
- Diziana Vangoidsenhoven
- S. Demuynck
- Lucas Petersen Barbosa Lima (ORCID: https://orcid.org/0000-0003-1569-0473)
- Min Soo Kim
Institutions
- IMEC (BE)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2026-10-29
- DOI
- https://doi.org/10.4028/p-1rb96y
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission
- Vlaamse regering
- HORIZON EUROPE Framework Programme