Electronic Structure of Cubic CsSnI₃: A First-Principles Assessment and Implications for Lead-Free Perovskite

Lead-free tin-halide perovskites are promising candidates for optoelectronic applications, motivating a detailed understanding of their electronic structure. This study investigates cubic CsSnI₃ using density functional theory within a semilocal Perdew–Burke–Ernzerhof-type generalized-gradient approximation, implemented in Quantum Espresso. The band structure along X→R→M→Γ→R indicates a direct band gap of approximately 0.5 eV, with both the valence-band maximum and conduction-band minimum located at R. The projected density of states shows predominantly Iodine 5p contributions in the valence-band region and Tin 5s/5p contributions in the conduction-band region, with comparatively little Cs contribution near the Fermi level. Band-edge dispersion suggests potentially favourable charge transport. Overall, the results support the semiconducting character of cubic CsSnI₃ and provide a qualitative electronic-structure basis for its relevance to lead-free optoelectronics.

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Publication Details

Journal
Advanced International Journal of Multidisciplinary Research
Published
2026-10-29
DOI
https://doi.org/10.62127/aijmr.2026.v04i05.1572
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Electronic Structure of Cubic CsSnI₃: A First-Principles Assessment and Implications for Lead-Free Perovskite

Lisy Thomas, Nisha Nisha
3 links
Advanced International Journal of Multidisciplinary Research
Perovskite Materials and Applications
article

Electronic Structure of Cubic CsSnI₃: A First-Principles Assessment and Implications for Lead-Free Perovskite

Lisy Thomas, Nisha Nisha
article en

Abstract

Lead-free tin-halide perovskites are promising candidates for optoelectronic applications, motivating a detailed understanding of their electronic structure. This study investigates cubic CsSnI₃ using density functional theory within a semilocal Perdew–Burke–Ernzerhof-type generalized-gradient approximation, implemented in Quantum Espresso. The band structure along X→R→M→Γ→R indicates a direct band gap of approximately 0.5 eV, with both the valence-band maximum and conduction-band minimum located at R. The projected density of states shows predominantly Iodine 5p contributions in the valence-band region and Tin 5s/5p contributions in the conduction-band region, with comparatively little Cs contribution near the Fermi level. Band-edge dispersion suggests potentially favourable charge transport. Overall, the results support the semiconducting character of cubic CsSnI₃ and provide a qualitative electronic-structure basis for its relevance to lead-free optoelectronics.

Advanced International Journal of Multidisciplinary ResearchVol. 4(5)
Dr. Bhim Rao Ambedkar University (IN), St. John's College, Agra (IN)
Openalex Percentile: Top 24%
Perovskite Materials and Applications
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