Effect of Azole-Free Inhibitors on Cu Dissolution in H2O2 and Non-H2O2 Based Wet Etching Solutions during Hard Mask Removal
In this work, the Cu etching behavior was investigated at an elevated temperature of 55°C with different formulated wet etching solutions, either with or without hydrogen peroxide (H 2 O 2 ) , to analyze their effectiveness on the Cu surface dissolution, wetting characteristics, and surface morphology during the metal hard mask stripping in the advanced BEOL process. Four azole-free corrosion inhibitors were selected and evaluated while BTA was considered as the standard reference. Inductively Coupled Plasma Mass Spectrometry (ICP-MS) results showed that all azole-free inhibitors exhibited comparable or lower levels of copper dissolution relative to the reference formulation containing benzotriazole (BTA) and H 2 O 2 . Among these, Chem A showed the lowest copper dissolution. Field Emission Scanning Electron Microscopy (FE-SEM) further confirmed Chem A's superior performance by revealing a clean copper surface with no detectable organic residue and improved surface morphology. These combined results establish Chem A as the most effective azole-free corrosion inhibitor tested under the given conditions.
Authors
- Bong Kyun Kang (ORCID: https://orcid.org/0000-0002-9241-0159)
- Sumit Kumar (ORCID: https://orcid.org/0000-0003-0322-3771)
- Byung Hyun Kim
- Soonmin Lee
- Tae Gon Kim
- Dong Gyu Kim
- Hyemin Lee
- Jin Goo Park
- Muskan Muskan
Institutions
- DuPont (United States) (US)
- Hanyang University (KR)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2026-10-29
- DOI
- https://doi.org/10.4028/p-jz2usu
- Primary Topic
- Corrosion Behavior and Inhibition
- Type
- article
- Field-Weighted Citation Impact
- 0.00