Effect of Azole-Free Inhibitors on Cu Dissolution in H2O2 and Non-H2O2 Based Wet Etching Solutions during Hard Mask Removal

In this work, the Cu etching behavior was investigated at an elevated temperature of 55°C with different formulated wet etching solutions, either with or without hydrogen peroxide (H 2 O 2 ) , to analyze their effectiveness on the Cu surface dissolution, wetting characteristics, and surface morphology during the metal hard mask stripping in the advanced BEOL process. Four azole-free corrosion inhibitors were selected and evaluated while BTA was considered as the standard reference. Inductively Coupled Plasma Mass Spectrometry (ICP-MS) results showed that all azole-free inhibitors exhibited comparable or lower levels of copper dissolution relative to the reference formulation containing benzotriazole (BTA) and H 2 O 2 . Among these, Chem A showed the lowest copper dissolution. Field Emission Scanning Electron Microscopy (FE-SEM) further confirmed Chem A's superior performance by revealing a clean copper surface with no detectable organic residue and improved surface morphology. These combined results establish Chem A as the most effective azole-free corrosion inhibitor tested under the given conditions.

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Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2026-10-29
DOI
https://doi.org/10.4028/p-jz2usu
Primary Topic
Corrosion Behavior and Inhibition
Type
article
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article

Effect of Azole-Free Inhibitors on Cu Dissolution in H2O2 and Non-H2O2 Based Wet Etching Solutions during Hard Mask Removal

Bong Kyun Kang, Sumit Kumar, Byung Hyun Kim, Soonmin Lee et al.
2 links
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Corrosion Behavior and Inhibition
article

Effect of Azole-Free Inhibitors on Cu Dissolution in H2O2 and Non-H2O2 Based Wet Etching Solutions during Hard Mask Removal

Bong Kyun Kang, Sumit Kumar, Byung Hyun Kim, Soonmin Lee, Tae Gon Kim, Dong Gyu Kim, Hyemin Lee, Jin Goo Park, Muskan Muskan
article en

Abstract

In this work, the Cu etching behavior was investigated at an elevated temperature of 55°C with different formulated wet etching solutions, either with or without hydrogen peroxide (H 2 O 2 ) , to analyze their effectiveness on the Cu surface dissolution, wetting characteristics, and surface morphology during the metal hard mask stripping in the advanced BEOL process. Four azole-free corrosion inhibitors were selected and evaluated while BTA was considered as the standard reference. Inductively Coupled Plasma Mass Spectrometry (ICP-MS) results showed that all azole-free inhibitors exhibited comparable or lower levels of copper dissolution relative to the reference formulation containing benzotriazole (BTA) and H 2 O 2 . Among these, Chem A showed the lowest copper dissolution. Field Emission Scanning Electron Microscopy (FE-SEM) further confirmed Chem A's superior performance by revealing a clean copper surface with no detectable organic residue and improved surface morphology. These combined results establish Chem A as the most effective azole-free corrosion inhibitor tested under the given conditions.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 395
DuPont (United States) (US), Hanyang University (KR)
Openalex Percentile: Top 29%
Corrosion Behavior and Inhibition
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