Self Assemble Monolayer for Area Selective ALD

In advanced semiconductor devices, shrink of critical dimension increases via resistance which reduces device performance. In order to decrease the interconnect via resistance, use of Self-Assembly-Monolayer (SAM) is proposed [1]. SAM works as Atomic-Layer-Deposition (ALD) blocking layer and enable to have Area-Selective-Deposition (ASD). In this study, we studied selective adsorption and ALD inhibition performance of SAM on W and Mo metals [2,3].