Switching the Ordering Pattern of Bi2Rh4 Breathing Distortion by Isovalent Chalcogen Substitution in Bi2Rh3 X 2 ( X = Se, S)

Abstract Layered inorganic materials can exhibit symmetry-breaking transitions in which electronic instabilities and local structural modes are strongly intertwined. Here we compare the isovalent chalcogenides Bi2Rh3Se2 and Bi2Rh3S2 by synchrotron single-crystal X-ray diffraction and density-functional-theory calculations, and identify a static Bi2Rh4 breathing distortion as the common local motif underlying their distinct low-temperature phases. In Bi2Rh3Se2, the transition near 240 K is characterized by the loss of C-centering without a change in the conventional unit-cell volume. The resulting primitive lattice contains inequivalent Rh4 quadrilaterals formed by alternating expansion and contraction, establishing a C-centering-breaking breathing order. Although previous spectroscopic studies have reported CDW-like signatures in Bi2Rh3Se2, the calculated Fermi surfaces of the high-temperature phase do not reveal an obvious nesting vector expected for a simple nesting-driven Peierls-type CDW scenario. Instead, the Rh 4d-derived electronic states at the Fermi level are naturally sensitive to the observed Rh4 breathing distortion, indicating that the transition is best described as a breathing-order transition accompanied by electronic reconstruction. In Bi2Rh3S2, a comparable Bi2Rh4 breathing distortion appears, but its ordering pattern is switched: when described in the high-temperature-cell setting, the Bi2Rh4 units form a large−small−small sequence along the aHT-direction, accompanied by an antiphase relation between neighboring chains, producing a commensurate 3× superstructure consistent with the first-order character of the transition. Calculations based on the experimentally refined structures further reveal a reduction of the density of states near EF and an anisotropic redistribution of occupied low-energy states in the breathing-distorted phases, supporting the coupling between the Bi2Rh4 motif and electronic reconstruction. These results show that isovalent chalcogen substitution selects the in-plane ordering pattern of an intrinsic Bi2Rh4 breathing distortion, thereby switching the collective symmetry-breaking pathway and associated electronic response.

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Journal
Chemistry of Materials
Published
2026-10-29
DOI
https://doi.org/10.1021/acs.chemmater.6c02320
Primary Topic
Physics of Superconductivity and Magnetism
Type
article
Field-Weighted Citation Impact
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article

Switching the Ordering Pattern of Bi2Rh4 Breathing Distortion by Isovalent Chalcogen Substitution in Bi2Rh3 X 2 ( X = Se, S)

Ritsuko Eguchi, Ryoji Asahi, Yoshihiro Kubozono, Naoyuki Katayama et al.
Chemistry of Materials
Physics of Superconductivity and Magnetism
article

Switching the Ordering Pattern of Bi2Rh4 Breathing Distortion by Isovalent Chalcogen Substitution in Bi2Rh3 X 2 ( X = Se, S)

Ritsuko Eguchi, Ryoji Asahi, Yoshihiro Kubozono, Naoyuki Katayama, Yuiga Nakamura, Ryoya Ito, Keita Kojima, K. Sugimoto, Tsubasa Ohashi, Chihaya Koyama
article en

Abstract

Abstract Layered inorganic materials can exhibit symmetry-breaking transitions in which electronic instabilities and local structural modes are strongly intertwined. Here we compare the isovalent chalcogenides Bi2Rh3Se2 and Bi2Rh3S2 by synchrotron single-crystal X-ray diffraction and density-functional-theory calculations, and identify a static Bi2Rh4 breathing distortion as the common local motif underlying their distinct low-temperature phases. In Bi2Rh3Se2, the transition near 240 K is characterized by the loss of C-centering without a change in the conventional unit-cell volume. The resulting primitive lattice contains inequivalent Rh4 quadrilaterals formed by alternating expansion and contraction, establishing a C-centering-breaking breathing order. Although previous spectroscopic studies have reported CDW-like signatures in Bi2Rh3Se2, the calculated Fermi surfaces of the high-temperature phase do not reveal an obvious nesting vector expected for a simple nesting-driven Peierls-type CDW scenario. Instead, the Rh 4d-derived electronic states at the Fermi level are naturally sensitive to the observed Rh4 breathing distortion, indicating that the transition is best described as a breathing-order transition accompanied by electronic reconstruction. In Bi2Rh3S2, a comparable Bi2Rh4 breathing distortion appears, but its ordering pattern is switched: when described in the high-temperature-cell setting, the Bi2Rh4 units form a large−small−small sequence along the aHT-direction, accompanied by an antiphase relation between neighboring chains, producing a commensurate 3× superstructure consistent with the first-order character of the transition. Calculations based on the experimentally refined structures further reveal a reduction of the density of states near EF and an anisotropic redistribution of occupied low-energy states in the breathing-distorted phases, supporting the coupling between the Bi2Rh4 motif and electronic reconstruction. These results show that isovalent chalcogen substitution selects the in-plane ordering pattern of an intrinsic Bi2Rh4 breathing distortion, thereby switching the collective symmetry-breaking pathway and associated electronic response.

Chemistry of Materials
Okayama University (JP), University of Hyogo (JP), Keio University (JP), SPring-8 (JP), Japan Synchrotron Radiation Research Institute (JP), Nagoya University (JP), Kitasato University (JP), The University of Tokyo (JP)
Support for Pioneering Research Initiated by the Next Generation, Japan Science and Technology Agency
Openalex Percentile: Top 23%
Physics of Superconductivity and Magnetism
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