Recent Developments in AI Technology and Its Application to Wet Process Optimization

Recent advancements in artificial intelligence (AI) have increased the need for high-performance, high-capacity semiconductors. Consequently, cutting-edge semiconductor structures have become increasingly complex, requiring highly precise optimization in manufacturing processes, and achieving high yield rates within short periods has become challenging. This study focuses on the use of various yield improvement and process development methods using AI in semiconductor manufacturing and development to address these challenges. Specifically, we report that Computational Fluid Dynamics (CFD) and Multi-Objective Bayesian Optimization (MOBO) can be used in the phosphoric acid etching during the word line formation of 3D NAND Flash, to determine optimal etching conditions and hard parameters for a batch-type wet etching bath without experimental verification using wafers.

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Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2026-10-29
DOI
https://doi.org/10.4028/p-zld5vm
Primary Topic
Machine Learning in Materials Science
Type
article
Field-Weighted Citation Impact
0.00
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article

Recent Developments in AI Technology and Its Application to Wet Process Optimization

小川義宏
3 links
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Machine Learning in Materials Science
article

Recent Developments in AI Technology and Its Application to Wet Process Optimization

小川義宏
article en

Abstract

Recent advancements in artificial intelligence (AI) have increased the need for high-performance, high-capacity semiconductors. Consequently, cutting-edge semiconductor structures have become increasingly complex, requiring highly precise optimization in manufacturing processes, and achieving high yield rates within short periods has become challenging. This study focuses on the use of various yield improvement and process development methods using AI in semiconductor manufacturing and development to address these challenges. Specifically, we report that Computational Fluid Dynamics (CFD) and Multi-Objective Bayesian Optimization (MOBO) can be used in the phosphoric acid etching during the word line formation of 3D NAND Flash, to determine optimal etching conditions and hard parameters for a batch-type wet etching bath without experimental verification using wafers.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 395
KIOXIA Corporation (Japan) (JP)
Openalex Percentile: Top 29%
Machine Learning in Materials Science
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