Efficient Wet Stripping of Photo Resist by UV Flood-Exposure

Wet stripping of bulk PR in general is difficult and getting a cleaner wafer without residues is even harder. This difficulty is amplified in the case of thick PR (used to create tall pillars in RDL). In this report we show that re-exposing the PR coated wafers to UV before wet stripping not only makes PR stripping easier but also provides cleaner surface using less solvent with a short process time. The impact of UV re-exposure on the ease of PR wet strip was studied in 2 phases. 1) Lab experiments were conducted on coupons in a beaker. The PR removal efficiency was established a) by visually b) using water contact angle and c) FTIR spectroscopy. 2) FAB tool tests were conducted on Waferstorm using TMAH based solvent. The PR removal efficiency was established using a) SP3 and b) water contact angle.

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Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2026-10-29
DOI
https://doi.org/10.4028/p-ywpny7
Primary Topic
Advancements in Photolithography Techniques
Type
article
Field-Weighted Citation Impact
0.00

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article

Efficient Wet Stripping of Photo Resist by UV Flood-Exposure

Phillip Tyler, John Taddei, Naveen Krishna Reddy, Amaia Diaz De Zerio et al.
1 links
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Advancements in Photolithography Techniques
article

Efficient Wet Stripping of Photo Resist by UV Flood-Exposure

Phillip Tyler, John Taddei, Naveen Krishna Reddy, Amaia Diaz De Zerio, Ivonne Saucedo Hernandez
article en

Abstract

Wet stripping of bulk PR in general is difficult and getting a cleaner wafer without residues is even harder. This difficulty is amplified in the case of thick PR (used to create tall pillars in RDL). In this report we show that re-exposing the PR coated wafers to UV before wet stripping not only makes PR stripping easier but also provides cleaner surface using less solvent with a short process time. The impact of UV re-exposure on the ease of PR wet strip was studied in 2 phases. 1) Lab experiments were conducted on coupons in a beaker. The PR removal efficiency was established a) by visually b) using water contact angle and c) FTIR spectroscopy. 2) FAB tool tests were conducted on Waferstorm using TMAH based solvent. The PR removal efficiency was established using a) SP3 and b) water contact angle.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 395
IMEC (BE), Veeco (United Kingdom) (GB)
European Commission, Vlaamse regering, HORIZON EUROPE Framework Programme
Openalex Percentile: Top 24%
Advancements in Photolithography Techniques
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