Micro-trench measurement of selective boron deposition during boron powder dropper operation in DIII-D

Abstract The selective boron (B) deposition rate is reported as measured using the micro-trench method in the DIII-D divertor during deuterium (D) H-mode outer strike point (OSP) sweeping plasma discharges with B powder injection via the impurity powder dropper (IPD). The selective deposition is defined as a result of B deposition and impurity sputtering (deposited B sputtered by B ions or other impurity ion species) in a micro-scale region geometrically shadowed from direct fuel/D+ ion bombardment. To perform this work, micro-trenches 32 µm × 32 µm × 4 µm deep were fabricated on a single-crystal silicon sample. The sample was exposed to DIII-D H-mode “cleaning” plasma discharges with D fueling and OSP sweeping via the Divertor Material Evaluation System (DiMES). The IPD injected B powder at rates of 5-20 mg/s during 2-5 s of H-mode plasmas in multiple discharges, adding up to 0.4 g injected in total. Injected B powders were ablated, ionized, and transported to PFC surfaces. Post-mortem analysis revealed that impurity deposition concentrated in a D+ ion shadowed area on the micro-trench floor, while no B deposition was observed outside of the micro-trench, which implied that net impurity deposition can be significantly enhanced by rough micro-structures on PFC surfaces, i.e., selective deposition. An energy-dispersive X-ray spectroscopy (EDS) analysis detected impurity deposition containing B, carbon, oxygen, and silicon. Combining the impurity deposition height profile measured by atomic force microscopy and the relative B concentration profiles measured by EDS, we determined the selective B deposition thickness of ~25 nm in the diverter region. The measured B deposition thickness agreed with a mass balance analysis to within half the magnitude when the B impurity flux was assumed to be concentrated near the OSP, as predicted by a real-time wall conditioning model developed to optimize IPD operations of advanced fusion reactors.

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Journal
Physica Scripta
Published
2026-10-28
DOI
https://doi.org/10.1088/1402-4896/aebac5
Primary Topic
Fusion materials and technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Micro-trench measurement of selective boron deposition during boron powder dropper operation in DIII-D

Shota Abe, J.L. Barr, Igor Bykov, A.G. McLean et al.
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Physica Scripta
Fusion materials and technologies
article

Micro-trench measurement of selective boron deposition during boron powder dropper operation in DIII-D

Shota Abe, J.L. Barr, Igor Bykov, A.G. McLean, Tyler Abrams, F. Effenberg, Ryan Hood, Dmitry L. Rudakov, A. Bortolon, Jun Ren, A W Hyatt
article en

Abstract

Abstract The selective boron (B) deposition rate is reported as measured using the micro-trench method in the DIII-D divertor during deuterium (D) H-mode outer strike point (OSP) sweeping plasma discharges with B powder injection via the impurity powder dropper (IPD). The selective deposition is defined as a result of B deposition and impurity sputtering (deposited B sputtered by B ions or other impurity ion species) in a micro-scale region geometrically shadowed from direct fuel/D+ ion bombardment. To perform this work, micro-trenches 32 µm × 32 µm × 4 µm deep were fabricated on a single-crystal silicon sample. The sample was exposed to DIII-D H-mode “cleaning” plasma discharges with D fueling and OSP sweeping via the Divertor Material Evaluation System (DiMES). The IPD injected B powder at rates of 5-20 mg/s during 2-5 s of H-mode plasmas in multiple discharges, adding up to 0.4 g injected in total. Injected B powders were ablated, ionized, and transported to PFC surfaces. Post-mortem analysis revealed that impurity deposition concentrated in a D+ ion shadowed area on the micro-trench floor, while no B deposition was observed outside of the micro-trench, which implied that net impurity deposition can be significantly enhanced by rough micro-structures on PFC surfaces, i.e., selective deposition. An energy-dispersive X-ray spectroscopy (EDS) analysis detected impurity deposition containing B, carbon, oxygen, and silicon. Combining the impurity deposition height profile measured by atomic force microscopy and the relative B concentration profiles measured by EDS, we determined the selective B deposition thickness of ~25 nm in the diverter region. The measured B deposition thickness agreed with a mass balance analysis to within half the magnitude when the B impurity flux was assumed to be concentrated near the OSP, as predicted by a real-time wall conditioning model developed to optimize IPD operations of advanced fusion reactors.

Physica Scripta
Lawrence Livermore National Laboratory (US), Sandia National Laboratories California (US), Princeton University (US), Princeton Plasma Physics Laboratory (US), University of California San Diego (US), General Atomics (United States) (US), University of Tennessee at Knoxville (US)
Office of Science
Openalex Percentile: Top 29%
Fusion materials and technologies
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