Enhancing the Stability of Ag/CH3NH3PbBr3 Interfaces via AgBr Doping

While CH3NH3PbBr3 (MAPbBr3) single crystals exhibit exceptional potential for biased X/γ-ray detection, achieving a stable metal–semiconductor contact remains a critical challenge. Herein, we address this issue by incorporating AgBr as a dopant into pristine MAPbBr3 single crystals prior to Ag electrode deposition. Our results reveal a concentration-dependent interfacial mechanism: while low-level doping introduces excess Br− ions and Pb vacancies that accelerate electrochemical corrosion, a high concentration of Ag+ within the lattice effectively suppresses the deleterious reaction between the Ag electrode and the perovskite. This work establishes a defect-engineering strategy to stabilize metal electrodes, offering a viable pathway for the development of reliable, high-performance MAPbBr3-based radiation detectors.