Heatmap visualization of memory-driven heat transfer in damaged semiconductor structures with double voids and Klein–Gordon-type nonlocality

Purpose This study aims to investigate the coupled mechanical, thermal and carrier transport behavior of a damaged semiconductor half-space with double porosity. The objective is to examine the combined influence of nonlocal elasticity, thermal memory, damage evolution and porosity on the field distributions under generalized thermoelastic conditions. Design/methodology/approach A unified mathematical model is developed by incorporating Klein–Gordon (KG) type nonlocal elasticity, carrier diffusion, double-porosity evolution, memory-dependent modified Lord–Shulman (LS) thermoelasticity and damage mechanics. The governing coupled equations are solved analytically using the normal-mode approach to obtain the distributions of displacement, temperature, carrier density, porosity, normal stress and intrinsic microstress. Findings The numerical study focuses on the relative effects of the five memory-dependent heat-conduction models, mechanical damage and the spatial and temporal nonlocality parameters on the coupled field distributions. The results show that the physical fields are predominantly localized within a narrow boundary-interaction region, where nonlocality, thermal memory and mechanical damage interact strongly. Spatial nonlocality suppresses surface deformation while increasing stress concentration and carrier accumulation, whereas thermal relaxation and memory effects modify the depth-wise field distributions. Carrier transport and double porosity remain essential components of the governing formulation. Research limitations/implications The proposed formulation provides a generalized theoretical framework for analyzing coupled multiphysics interactions in damaged semiconductor materials with double porosity. The model may be extended to more complex geometries, multilayered configurations and transient loading conditions in future investigations. Practical implications The developed model is applicable to the design and reliability assessment of semiconductor devices, porous electronic materials, microelectromechanical systems, optoelectronic components and other advanced functional materials where thermal memory, nonlocal effects and damage mechanisms significantly influence material performance. Social implications Improved understanding of coupled thermo-mechanical and carrier transport phenomena contributes to the development of more reliable semiconductor technologies, supporting advances in modern electronics, sensing devices and energy-efficient engineering systems. Originality/value This study presents an analytical framework that simultaneously incorporates nonlocal elasticity, memory-dependent thermoelasticity, carrier transport, damage mechanics and double porosity in semiconductor media. The combined treatment of these interacting physical mechanisms provides new insights into multiphysics wave propagation and boundary-layer behavior that have not been reported in existing studies.