Comparative Analysis of Memristor Models and Implementation of a Variation-Tolerant Memristive Weighted Logic Half-Adder

Abstract This article presents a detailed comparative evaluation of three widely referenced memristor model formulations, namely, the Strukov–Williams linear ion-drift model, the Joglekar nonlinear windowing model, and the Voltage-Threshold Adaptive Memristor (VTEAM) model, alongside the physical design and circuit-level validation of a noise-tolerant weighted-logic half-adder. Driven by a continuous 1.0 V, 1.0 Hz sinusoidal drive, baseline mean power dissipation is established to be minimum for the VTEAM formulation with a mean power consumption to 0.0091 mW (9.1 μW). To eliminate parasitic sneak-path currents in passive arrays, a 2-Diode 1-Memristor (2D1M) cell configuration is combined with differential transimpedance amplifier (TIA) virtual-ground sensing. Circuit simulations demonstrate that virtual-ground readout suppresses sneak leakage by more than five orders of magnitude relative to signal levels (1.86 μA signal current vs 10 pA sub-threshold diode saturation floor). The multi-layer weighted-logic half-adder maps continuous synaptic weights Wij ∈ [-1.5, +1.5] into differential conductance pairs bounded within a range from 10 μS to 100 μS. Statistical validation via 1,000-trial Monte Carlo simulations confirms high fault tolerance, maintaining 100% logic classification accuracy up to σ = 5% device variation, 99.55% ± 1.25% under σ = 10.0% industrial process tolerances (with Mean Absolute Error MAE = 0.01561 V), and 89.58% ± 6.42% under severe σ = 20.0% fluctuations.