Unlocking Large-Area Two-Dimensional Transition Metal Dichalcogenides: From Epitaxial Growth to Frontier Applications

Abstract Wafer-scale, high-quality, thickness- and stacking configuration-tunable two-dimensional (2D) semiconducting transition metal dichalcogenides (STMDCs) hold great potential to serve as channel materials in complementary field effect transistors (CFETs) at the sub-nanometer technology node, thus further extending the logic technology roadmap. Epitaxial growth of 2D STMDCs on industrial-compatible substrates should be the first step. In this perspective, we present an overview of recent advances in the epitaxial mechanism explorations and wafer-scale growth of monolayer STMDC films or single crystals via substrate surface modulations and growth methodology optimizations. The applications of 2D STMDC wafers in high-performance electronic and optoelectronic devices are reviewed. Challenges and prospects are also highlighted, especially regarding the 12-inch-scale preparations of monolayer STMDC films and functional device integration.