InAs Quantum Dots for Infrared Optoelectronics: Interface Engineering, Device Performance, and Emerging Opportunities

Indium arsenide (InAs) quantum dots (QDs) offer a promising Pb- and Hg-free material platform for infrared optoelectronics owing to their narrow bulk bandgap, strong quantum confinement, and size-tunable optical response. However, surface defects, limited electronic coupling in quantum dot (QD) solids, and operational instability can prevent advances in material quality from translating into improved device performance. This review examines InAs QDs through a materials-interface-device-performance framework. We first discuss how synthetic control, core/shell heterostructures, ligand exchange, and surface reconstruction influence interfacial electronic states and carrier dynamics. We then analyze device-specific performance and trade-offs in solar cells, quantum dot light-emitting diodes, infrared photodetectors, and field-effect transistors, focusing on charge injection and extraction, trap-assisted losses, noise, and stability. Finally, we identify emerging opportunities in contact engineering, reliable performance benchmarking, scalable film fabrication, and advanced infrared device architectures. This device-oriented perspective emphasizes the role of coordinated interface engineering in connecting nanocrystal properties with functional optoelectronic performance.