High-pressure regulation effects on the magnetotransport properties of flux-grown ZrTe5 single crystals

Flux-grown ZrTe5 crystals with near-ideal stoichiometric composition exhibit semiconducting behavior at ambient pressure, which can be systematically manipulated by altering the Te content or by applying external pressure or magnetic field. In this study, we investigate the electrical resistivity and magnetoresistivity (MR) of flux-grown ZrTe5 single crystals under pressures up to 7 GPa using a palm cubic anvil high-pressure cell. The pressure-dependent electrical resistivity reveals a systematic crossover from a semiconducting to a semimetallic phase between 3 and 4 GPa, which also coincides with the sign reversal of the Hall resistivity at low temperatures. These experimental observations collectively suggest the occurrence of a pressure-induced Lifshitz-like transition in the 3-4 GPa pressure range. Furthermore, at 7 GPa, we observe a sudden drop in electrical resistivity near 3.4 K, indicative of a superconducting transition. Notably, the observed superconducting transition temperature is nearly twice that reported for previously studied chemical vapor transport (CVT)-grown ZrTe5 crystals (Tc ≈ 1.8 K). To gain additional theoretical insight, we also performed first-principles calculations including spin-orbit coupling over a wide 0-6 GPa pressure range. The calculations reveal a substantial reconstruction of the low-energy electronic states, characterized by a pronounced enhancement of the density of states at the Fermi level and a significant modification of the band gap near 3 GPa, consistent with the experimentally observed phenomena. Symmetry-indicator and Wilson-loop analyses were further performed to investigate the evolution of the topological electronic structure under pressure. These findings demonstrate that pressure, together with subtle variations in crystal stoichiometry, drives remarkable electronic and structural transformations in ZrTe5, consistent with the pressure-induced Lifshitz transition and enhanced superconductivity in this Dirac semimetal.

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Journal
Journal of Physics Condensed Matter
Published
2026-10-27
DOI
https://doi.org/10.1088/1361-648x/aeba30
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

High-pressure regulation effects on the magnetotransport properties of flux-grown ZrTe5 single crystals

Sanskar Mishra, Yoshiya Uwatoko, Prashant Shahi, Jinguang Cheng et al.
2 links
Journal of Physics Condensed Matter
Topological Materials and Phenomena
article

High-pressure regulation effects on the magnetotransport properties of flux-grown ZrTe5 single crystals

Sanskar Mishra, Yoshiya Uwatoko, Prashant Shahi, Jinguang Cheng, Jianping Sun, Vinod K. Gangwar, Sandip Chatterjee, Nagendra Singh
article en

Abstract

Flux-grown ZrTe5 crystals with near-ideal stoichiometric composition exhibit semiconducting behavior at ambient pressure, which can be systematically manipulated by altering the Te content or by applying external pressure or magnetic field. In this study, we investigate the electrical resistivity and magnetoresistivity (MR) of flux-grown ZrTe5 single crystals under pressures up to 7 GPa using a palm cubic anvil high-pressure cell. The pressure-dependent electrical resistivity reveals a systematic crossover from a semiconducting to a semimetallic phase between 3 and 4 GPa, which also coincides with the sign reversal of the Hall resistivity at low temperatures. These experimental observations collectively suggest the occurrence of a pressure-induced Lifshitz-like transition in the 3-4 GPa pressure range. Furthermore, at 7 GPa, we observe a sudden drop in electrical resistivity near 3.4 K, indicative of a superconducting transition. Notably, the observed superconducting transition temperature is nearly twice that reported for previously studied chemical vapor transport (CVT)-grown ZrTe5 crystals (Tc ≈ 1.8 K). To gain additional theoretical insight, we also performed first-principles calculations including spin-orbit coupling over a wide 0-6 GPa pressure range. The calculations reveal a substantial reconstruction of the low-energy electronic states, characterized by a pronounced enhancement of the density of states at the Fermi level and a significant modification of the band gap near 3 GPa, consistent with the experimentally observed phenomena. Symmetry-indicator and Wilson-loop analyses were further performed to investigate the evolution of the topological electronic structure under pressure. These findings demonstrate that pressure, together with subtle variations in crystal stoichiometry, drives remarkable electronic and structural transformations in ZrTe5, consistent with the pressure-induced Lifshitz transition and enhanced superconductivity in this Dirac semimetal.

Journal of Physics Condensed Matter
Institute of Physics (CN), Indian Institute of Technology BHU (IN), The University of Tokyo (JP), Deen Dayal Upadhyaya Gorakhpur University (IN)
University Grants Commission, National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 20%
Topological Materials and Phenomena
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