Low-Loss Superjunction SiC MOSFET with Improved Breakdown Voltage and Reverse-Recovery Performance

Abstract Conventional silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistors (MOSFETs) still face challenges such as high body diode forward voltage, and difficulty in balancing static and dynamic performance. To address these issues, a novel split-gate multi-channel superjunction SiC MOSFET with an integrated metal-oxide-semiconductor-channel diode, named as MSM-MOS, is proposed. The electrical characteristics of the proposed device are investigated using technology computer-aided design simulations and compared with those of a conventional trench MOSFET and a superjunction MOSFET with an integrated Schottky barrier diode.The MSM-MOS achieves a breakdown voltage of 2037 V and a specific on-resistance of 0.70 mΩ•cm 2 , showing improved drain-to-source blocking capability in the off-state and on-state conduction performance. In reverse conduction, the MSM-MOS shows a forward voltage of 1.77 V and a low reverse-recovery charge. Consequently, the MSM-MOS achieves the highest Baliga figure of merit of 5.92 GW/cm 2 and the lowest dynamic figure of merit of 32.9 mΩ•nC among the three device structures.