Transverse detuned loading for modulation bandwidth enhancement in VCSELs

Directly modulated vertical-cavity surface-emitting lasers (VCSELs) are central to short-reach optical interconnects, where modulation bandwidth and power efficiency are critical factors for increasing data transfer capacity. Conventional oxide VCSELs still require power-hungry signal processing to achieve high-speed data transmission above 100 Gb/s. Here we report an experimental implementation of detuned loading in a VCSEL to enhance the modulation bandwidth. The detuned loading is achieved by carrier-induced index variations that reshape an engineered transverse mode so its overlap with spatially selective optical losses decreases with increased carrier density. This produces a negative differential loss reminiscent of that in detuned-loaded DBR lasers lasing on the long-wavelength reflectivity flank. The resulting 850 nm single-mode VCSEL exhibits an enhanced carrier-photon relaxation frequency of 44 GHz, yielding a 3dB electrical modulation bandwidth exceeding 50 GHz. The enhancement persists from 25 °C to 75 °C showing the robustness of the mechanism introduced. The same device supports 106.25 Gb/s NRZ transmission without digital signal processing, transmitter pre-emphasis or receiver equalization. These results establish transverse detuned loading as a robust alternative approach for extending the modulation bandwidth of vertical-cavity surface-emitting lasers.

Authors

Publication Details

Journal
arXiv (Cornell University)
Published
2026-10-26
DOI
https://doi.org/10.48550/arxiv.2610.35578
Primary Topic
Semiconductor Lasers and Optical Devices
Type
preprint
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preprint

Transverse detuned loading for modulation bandwidth enhancement in VCSELs

W. Maineult, Antoine Pissis, Donato Bonfrate, Tobias Süss et al.
arXiv (Cornell University)
Semiconductor Lasers and Optical Devices
preprint

Transverse detuned loading for modulation bandwidth enhancement in VCSELs

W. Maineult, Antoine Pissis, Donato Bonfrate, Tobias Süss, Giacomo Graziano, Philipp Täschler, Stefano Tirelli, Vincenzo Pasanisi, Dario Schiavon, Simon Hönl, Martin Spieser, Aurelio A. Rossinelli, Evgeny Zibik, Richard Schatz
preprint en

Abstract

Directly modulated vertical-cavity surface-emitting lasers (VCSELs) are central to short-reach optical interconnects, where modulation bandwidth and power efficiency are critical factors for increasing data transfer capacity. Conventional oxide VCSELs still require power-hungry signal processing to achieve high-speed data transmission above 100 Gb/s. Here we report an experimental implementation of detuned loading in a VCSEL to enhance the modulation bandwidth. The detuned loading is achieved by carrier-induced index variations that reshape an engineered transverse mode so its overlap with spatially selective optical losses decreases with increased carrier density. This produces a negative differential loss reminiscent of that in detuned-loaded DBR lasers lasing on the long-wavelength reflectivity flank. The resulting 850 nm single-mode VCSEL exhibits an enhanced carrier-photon relaxation frequency of 44 GHz, yielding a 3dB electrical modulation bandwidth exceeding 50 GHz. The enhancement persists from 25 °C to 75 °C showing the robustness of the mechanism introduced. The same device supports 106.25 Gb/s NRZ transmission without digital signal processing, transmitter pre-emphasis or receiver equalization. These results establish transverse detuned loading as a robust alternative approach for extending the modulation bandwidth of vertical-cavity surface-emitting lasers.

arXiv (Cornell University)
Semiconductor Lasers and Optical Devices
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