THE RELATIONSHIP BETWEEN STRUCTURAL DEFECTS AND ELECTRICAL CONDUCTIVITY IN ZnO THIN FILMS: AN INTERDISCIPLINARY RESEARCH APPROACH

This paper discusses the relationship between structural defects and electrical conductivity in zinc oxide (ZnO) thin films from an interdisciplinary perspective. The possible roles of oxygen and zinc vacancies, interstitial atoms, grain boundaries and lattice disorder in determining carrier concentration and mobility are reviewed. Combining X-ray diffraction, photoluminescence, Hall-effect and four-point-probe measurements is proposed as a practical strategy for connecting structural information with electrical properties. All figures and conceptual curves in this manuscript are schematic illustrations rather than measured experimental data.

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Publication Details

Journal
HSR (London)
Published
2026-10-26
DOI
https://doi.org/10.5281/zenodo.23655790
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
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article

THE RELATIONSHIP BETWEEN STRUCTURAL DEFECTS AND ELECTRICAL CONDUCTIVITY IN ZnO THIN FILMS: AN INTERDISCIPLINARY RESEARCH APPROACH

Sobirova Tursunoy Abdipatto qizi, Worldly Knowledge Publishing Centre
HSR (London)
ZnO doping and properties
article

THE RELATIONSHIP BETWEEN STRUCTURAL DEFECTS AND ELECTRICAL CONDUCTIVITY IN ZnO THIN FILMS: AN INTERDISCIPLINARY RESEARCH APPROACH

Sobirova Tursunoy Abdipatto qizi, Worldly Knowledge Publishing Centre
article en

Abstract

This paper discusses the relationship between structural defects and electrical conductivity in zinc oxide (ZnO) thin films from an interdisciplinary perspective. The possible roles of oxygen and zinc vacancies, interstitial atoms, grain boundaries and lattice disorder in determining carrier concentration and mobility are reviewed. Combining X-ray diffraction, photoluminescence, Hall-effect and four-point-probe measurements is proposed as a practical strategy for connecting structural information with electrical properties. All figures and conceptual curves in this manuscript are schematic illustrations rather than measured experimental data.

HSR (London)
Andijon davlat texnika insituti (UZ)
Openalex Percentile: Top 29%
ZnO doping and properties
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