First-Principles Investigation of the Electronic, Excitonic, Optical, and Vibrational Properties of α-InS Monolayer

Abstract Novel two-dimensional structural phases drive the development of ultracompact and highly efficient semiconductor technologies. Although indium sulfide is a well-known material, the intrinsic limits of the excitonic interactions, specifically within its 2D phase, are not yet fully established. In this work, we performed an ab initio characterization of the α-InS hexagonal monolayer, encompassing its structural stability, electronic, excitonic, optical, and vibrational properties. The structural stability was confirmed at the mechanical, dynamical, and thermodynamical levels, with this monolayer being an indirect semiconductor exhibiting an HSE06+SOC electronic band gap of 2.72 eV and a weak SOC effect. Of its 9 optical phonon modes, only 1 is active in the IR spectrum at 243.9 cm–1 and 3 in Raman, at 102.7, 243.9, and 280.4 cm–1. Its excitonic ground states are indirect, with 2.27 eV and an exciton binding energy of 449 meV; these quasiparticle effects result in a red shift of the optical absorption gap and a small anisotropy in its linear optical response.

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2026-10-26
DOI
https://doi.org/10.1021/acs.jpcc.6c04797
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

First-Principles Investigation of the Electronic, Excitonic, Optical, and Vibrational Properties of α-InS Monolayer

Celso Alves do Nascimento Júnior, Cássio Sanguini Sergio, Fabrício Morais de Vasconcelos, Luiz Antônio Ribeiro et al.
The Journal of Physical Chemistry C
2D Materials and Applications
article

First-Principles Investigation of the Electronic, Excitonic, Optical, and Vibrational Properties of α-InS Monolayer

Celso Alves do Nascimento Júnior, Cássio Sanguini Sergio, Fabrício Morais de Vasconcelos, Luiz Antônio Ribeiro, Alexandre Cavalheiro Dias, Eronildo C. Castro, Carlos M. O. Bastos
article en

Abstract

Abstract Novel two-dimensional structural phases drive the development of ultracompact and highly efficient semiconductor technologies. Although indium sulfide is a well-known material, the intrinsic limits of the excitonic interactions, specifically within its 2D phase, are not yet fully established. In this work, we performed an ab initio characterization of the α-InS hexagonal monolayer, encompassing its structural stability, electronic, excitonic, optical, and vibrational properties. The structural stability was confirmed at the mechanical, dynamical, and thermodynamical levels, with this monolayer being an indirect semiconductor exhibiting an HSE06+SOC electronic band gap of 2.72 eV and a weak SOC effect. Of its 9 optical phonon modes, only 1 is active in the IR spectrum at 243.9 cm–1 and 3 in Raman, at 102.7, 243.9, and 280.4 cm–1. Its excitonic ground states are indirect, with 2.27 eV and an exciton binding energy of 449 meV; these quasiparticle effects result in a red shift of the optical absorption gap and a small anisotropy in its linear optical response.

The Journal of Physical Chemistry C
Universidade de Brasília (BR), Norwegian University of Science and Technology (NO), Instituto Federal do Piauí (BR), Universidade Federal de Roraima (BR)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Ministério da Ciência, Tecnologia e Inovação, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Financiadora de Estudos e Projetos, Norges Forskningsråd, Fundação de Apoio à Pesquisa do Distrito Federal, Universidade Estadual de Campinas, Universidade Federal do Rio de Janeiro, Centro Nacional de Processamento de Alto Desempenho em São Paulo
Openalex Percentile: Top 29%
2D Materials and Applications
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