Wideband nonuniform distributed power detector and compact directional coupler for millimeter-wave satellite communication

Abstract This work presents the design, implementation, and theoretical analysis of a wideband, high-sensitivity power detector, together with a compact, broadside-coupled directional coupler. The novel nonuniform distributed detector topology was implemented in a 130 nm $130\,\mathrm{nm}$ 130 n m silicon-germanium bipolar complementary metal-oxide-semiconductor technology, enabling monolithic integration of the proposed detector in satellite communication millimeter-wave front-end components. The detector achieves a higher voltage sensitivity in comparison to previously reported distributed detectors, from 45.12 kVW minus 1 $45.12\,\mathrm{kV\,W^{-1}}$ 45.12 k V W − 1 at 2.5 GHz $2.5\,\mathrm{GHz}$ 2.5 G H z to 10.51 kVW minus 1 $10.51\,\mathrm{kV\,W^{-1}}$ 10.51 k V W − 1 at 110 GHz $110\,\mathrm{GHz}$ 110 G H z , a wideband input matching below minus 10 dB $-10\,\mathrm{dB}$ − 10 d B

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Publication Details

Journal
International Journal of Microwave and Wireless Technologies
Published
2026-10-26
DOI
https://doi.org/10.1017/s1759078726103936
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

Wideband nonuniform distributed power detector and compact directional coupler for millimeter-wave satellite communication

Ingmar Kallfass, Burak Güven Özat, Mark J. Neff
International Journal of Microwave and Wireless Technologies
Radio Frequency Integrated Circuit Design
article

Wideband nonuniform distributed power detector and compact directional coupler for millimeter-wave satellite communication

Ingmar Kallfass, Burak Güven Özat, Mark J. Neff
article en

Abstract

Abstract This work presents the design, implementation, and theoretical analysis of a wideband, high-sensitivity power detector, together with a compact, broadside-coupled directional coupler. The novel nonuniform distributed detector topology was implemented in a 130 nm $130\,\mathrm{nm}$ 130 n m silicon-germanium bipolar complementary metal-oxide-semiconductor technology, enabling monolithic integration of the proposed detector in satellite communication millimeter-wave front-end components. The detector achieves a higher voltage sensitivity in comparison to previously reported distributed detectors, from 45.12 kVW minus 1 $45.12\,\mathrm{kV\,W^{-1}}$ 45.12 k V W − 1 at 2.5 GHz $2.5\,\mathrm{GHz}$ 2.5 G H z to 10.51 kVW minus 1 $10.51\,\mathrm{kV\,W^{-1}}$ 10.51 k V W − 1 at 110 GHz $110\,\mathrm{GHz}$ 110 G H z , a wideband input matching below minus 10 dB $-10\,\mathrm{dB}$ − 10 d B

International Journal of Microwave and Wireless Technologies
University of Stuttgart (DE)
Deutsche Forschungsgemeinschaft, Deutsches Zentrum für Luft- und Raumfahrt
Openalex Percentile: Top 24%
Radio Frequency Integrated Circuit Design
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Wideband nonuniform distributed power detector and compact directional coupler for millimeter-wave satellite communication — Ingmar Kallfass, Burak Güven Özat, et al. · International Journal of Microwave and Wireless Technologies (2026) | TGRS Research Map | TGRS