Solvent-Engineered CsPbBr3 Perovskite Memristors with Enhanced Humidity Stability toward Artificial Nociceptors and Data Encryption–Decryption

Abstract Metal halide perovskite memristors present compelling opportunities for next-generation information-processing devices, encompassing nonvolatile memory, neuromorphic computing, and information security. However, several critical bottlenecks, including poor thin-film crystallization, abundant defect states, and inferior humidity stability, still greatly hinder the fabrication of highly reliable devices. Herein, the solvent engineering strategy is proposed to enhance the memristive properties of the CsPbBr3-based memristor. Benefiting from the incorporation of methylammonium acetate (MAAc), the optimized Ag/CsPbBr3-MAAc/ITO device exhibits stable bipolar resistive switching behavior (ON/OFF ratio > 2 × 102), excellent cycling uniformity (coefficient of variation of operating voltage as low as 2%), and outstanding tolerance to high humidity. Because of the continuously tunable resistive modulation characteristics, the device successfully implements fundamental biological synaptic functions, including paired-pulse facilitation (PPF), paired-pulse depression (PPD), and spike-timing-dependent plasticity (STDP) as an artificial synapse. Furthermore, the memristor is used to construct logic devices (OR, AND, MUX) based on bipolar resistive switching. By constructing the arrayed circuits, encryption and decryption processing of text (ASCII code) and image data is successfully realized as information protection systems. This work presents a strategy to optimize the performance of metal halide perovskite memristors and further reveals their promising applications in bionic sensory neural networks and advanced data encryption–decryption systems.