Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics

ABSTRACT Magnetoelectric multiferroics enable voltage control of magnetic states for low‐energy, non‐volatile memory and logic. Their practical value, however, depends on the complete device pathway, not coupling strength alone. This Review evaluates materials, switching mechanisms, and devices against these requirements, distinguishing measured performance from projected targets. We compare three magnetoelectric random‐access memory (MeRAM) routes with ferroelectric RAM and spin‐transfer torque magnetic RAM, and assess magnetoelectric spin–orbit (MESO) logic alongside complementary metal‐oxide‐semiconductor (CMOS) technology and current‐driven spintronics. MeRAM combines electric‐field writing, magnetic storage, and nondestructive readout, with prospects for low write energy and closer memory–logic integration. However, no integrated device has yet combined these benefits with competitive speed, retention, endurance, read margin, and density. For magnetoelectric logic, projected low‐voltage, non‐volatile operation has yet to be matched by experimental demonstrations of the full conversion path, gain and fan‐out. Results from BiFeO 3 , room‐temperature hexaferrites and other platforms identify deterministic switching, interface quality and thin‐film integration as central to closing the gap between projections and experiments. Magnetoelectric devices are therefore more likely to complement CMOS than replace it, particularly in logic‐in‐memory, compute‐near‐memory and normally‐off systems, where non‐volatility and reduced data movement could support next‐generation ultralow‐power electronics.