Grinding wheel-wafer interfacial evolution-induced transition of material removal mechanisms and its effect on SiC wafer integrity

In ultra-precision grinding of 4H-SiC wafers, the grinding wheel surface topography plays an important role in the wheel-wafer interfacial state, material removal mechanisms, and the coupled evolution of wafer surface and subsurface integrity. In this study, in-process abrasive water jet dressing was employed to regulate the wheel surface topography and consequently modify the micro-contact state at the wheel-wafer interface. Multi-scale characterizations of wheel topography, grinding responses, and wafer integrity were examined to clarify the evolution of the grinding interface and its effect on wafer quality. The results reveal a nonlinear interfacial evolution with increasing dressing scale, characterized by three states: localized passivation-instability state, dynamically stable load-bearing state, and excessive renewal-interfacial instability state. Different interfacial states showed clear correspondence with material removal behavior and wafer damage characteristics. At the dressing scale of 2 μm, the coordinated peak structure and spatial distribution of the wheel surface were associated with a more pronounced tendency toward ductile-like removal and improved wafer surface and subsurface integrity. In contrast, both insufficient and excessive dressing may destabilize the interfacial state, increase the tendency for brittle fracture-related removal, and deteriorate wafer integrity. The evolution of wheel topography may alter the local contact conditions and load distribution of composite micro-asperity units, thereby influencing abrasive-wafer interactions and the transition between ductile-like and fracture-related removal. A coupled evolutionary pathway of “wheel topography-interfacial state-material removal-wafer integrity” is established, providing a theoretical basis and physical understanding for regulating material removal behavior and optimizing the grinding wheel-wafer interface in the processing of brittle materials.

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Publication Details

Journal
Materials Science in Semiconductor Processing
Published
2026-10-18
DOI
https://doi.org/10.1016/j.mssp.2026.111306
Primary Topic
Advanced Surface Polishing Techniques
Type
article
Field-Weighted Citation Impact
0.00

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article

Grinding wheel-wafer interfacial evolution-induced transition of material removal mechanisms and its effect on SiC wafer integrity

Renchen Zhou, Ziping Zhang, Shaohui Yin, Rong Li
Materials Science in Semiconductor Processing
Advanced Surface Polishing Techniques
article

Grinding wheel-wafer interfacial evolution-induced transition of material removal mechanisms and its effect on SiC wafer integrity

Renchen Zhou, Ziping Zhang, Shaohui Yin, Rong Li
article en

Abstract

In ultra-precision grinding of 4H-SiC wafers, the grinding wheel surface topography plays an important role in the wheel-wafer interfacial state, material removal mechanisms, and the coupled evolution of wafer surface and subsurface integrity. In this study, in-process abrasive water jet dressing was employed to regulate the wheel surface topography and consequently modify the micro-contact state at the wheel-wafer interface. Multi-scale characterizations of wheel topography, grinding responses, and wafer integrity were examined to clarify the evolution of the grinding interface and its effect on wafer quality. The results reveal a nonlinear interfacial evolution with increasing dressing scale, characterized by three states: localized passivation-instability state, dynamically stable load-bearing state, and excessive renewal-interfacial instability state. Different interfacial states showed clear correspondence with material removal behavior and wafer damage characteristics. At the dressing scale of 2 μm, the coordinated peak structure and spatial distribution of the wheel surface were associated with a more pronounced tendency toward ductile-like removal and improved wafer surface and subsurface integrity. In contrast, both insufficient and excessive dressing may destabilize the interfacial state, increase the tendency for brittle fracture-related removal, and deteriorate wafer integrity. The evolution of wheel topography may alter the local contact conditions and load distribution of composite micro-asperity units, thereby influencing abrasive-wafer interactions and the transition between ductile-like and fracture-related removal. A coupled evolutionary pathway of “wheel topography-interfacial state-material removal-wafer integrity” is established, providing a theoretical basis and physical understanding for regulating material removal behavior and optimizing the grinding wheel-wafer interface in the processing of brittle materials.

Materials Science in Semiconductor ProcessingVol. 218
Hunan University (CN)
National Natural Science Foundation of China, National Major Science and Technology Projects of China
Openalex Percentile: Top 24%
Advanced Surface Polishing Techniques
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