Overcoming Indium-Tin-Oxide Optical Losses in InAs Colloidal Quantum-Dot Light-Emitting Diodes at 1550 nm

Abstract Light-emitting diodes (LEDs) based on colloidal InAs quantum dots (QDs) have emerged as promising light sources for the short-wave infrared (SWIR) range. However, their development is limited by relatively low photoluminescence quantum yield as well as intrinsic device design challenges. Here, we report LEDs with electroluminescence (EL) in the SWIR based on InAs/ZnSe core/shell colloidal QDs, synthesized via a seedless one-pot approach that enables the rapid growth of relatively large InAs cores. Zirconium-doped indium oxide (InZrO) was used as the bottom transparent electrode owing to its significantly higher infrared transparency compared to the commonly employed tin-doped indium oxide (ITO). These two key innovations pushed the EL beyond 1500 nm, with external quantum efficiencies of 3.0, 1.2, and 0.6% at 1093, 1198, and 1547 nm, respectively.

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Publication Details

Journal
ACS Energy Letters
Published
2026-10-16
DOI
https://doi.org/10.1021/acsenergylett.6c02792
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
0.00

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article

Overcoming Indium-Tin-Oxide Optical Losses in InAs Colloidal Quantum-Dot Light-Emitting Diodes at 1550 nm

Francesco De Boni, Mirko Prato, Joost W. C. Reinders, Luca De Trizio et al.
ACS Energy Letters
Quantum Dots Synthesis And Properties
article

Overcoming Indium-Tin-Oxide Optical Losses in InAs Colloidal Quantum-Dot Light-Emitting Diodes at 1550 nm

Francesco De Boni, Mirko Prato, Joost W. C. Reinders, Luca De Trizio, Kassio P. S. Zanoni, Caroline Murawski, Hossein Roshan, Liberato Manna, Yurii P. Ivanov, Giorgio Divitini, Chiara Solinas, Henk J. Bolink, Guncem Ozgun Eren, Francesco Di Stasio, Simon Letzer
article en

Abstract

Abstract Light-emitting diodes (LEDs) based on colloidal InAs quantum dots (QDs) have emerged as promising light sources for the short-wave infrared (SWIR) range. However, their development is limited by relatively low photoluminescence quantum yield as well as intrinsic device design challenges. Here, we report LEDs with electroluminescence (EL) in the SWIR based on InAs/ZnSe core/shell colloidal QDs, synthesized via a seedless one-pot approach that enables the rapid growth of relatively large InAs cores. Zirconium-doped indium oxide (InZrO) was used as the bottom transparent electrode owing to its significantly higher infrared transparency compared to the commonly employed tin-doped indium oxide (ITO). These two key innovations pushed the EL beyond 1500 nm, with external quantum efficiencies of 3.0, 1.2, and 0.6% at 1093, 1198, and 1547 nm, respectively.

ACS Energy Letters
Universitat de València (ES), Italian Institute of Technology (IT), Technische Universität Dresden (DE), University of Genoa (IT)
Deutsche Forschungsgemeinschaft, Ministero dell’Istruzione, dell’Università e della Ricerca, Ministerio de Ciencia e Innovación, Istituto Italiano di Tecnologia, European Research Council, European Regional Development Fund, Agencia Estatal de Investigación, Moonshot Research and Development Program, HORIZON EUROPE European Innovation Council
Openalex Percentile: Top 28%
Quantum Dots Synthesis And Properties
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