Effect of Nitrogen Doping on the Proton‐Irradiation Stability of Carbon Nanowalls

ABSTRACT Radiation‐stable materials are crucial for electronics and optoelectronic systems operating in extreme environments, including space and nuclear applications. This work presents a comprehensive comparative study of the radiation stability of carbon nanowalls (CNWs) and nitrogen‐doped CNWs (N‐CNWs) under 0.5 MeV proton irradiation over an extended fluence range of 10 13 –10 15 p·cm −2 . Morphological analysis confirmed that both samples preserve their interconnected three‐dimensional network without signs of structural degradation even at the maximum fluence. Raman spectroscopy further revealed that both systems retain their graphene‐like structure with only moderate defect evolution and no evidence of amorphization. X‐ray photoelectron spectroscopy (XPS) analysis demonstrated the overall chemical stability of both materials, accompanied by a radiation‐induced redistribution of sp 2 /sp 3 states. Ultraviolet photoelectron spectroscopy (UPS) measurements revealed an increase in the work function and a shift of the Fermi level for both CNWs and N‐CNWs, indicating modification of the surface electronic structure under irradiation. Optical and electrical measurements demonstrated different radiation responses of the materials. For CNWs, dose‐dependent degradation of charge transport and optical properties is observed, whereas N‐CNWs demonstrate higher functional stability. The results obtained expand understanding of the radiation evolution of carbon nanostructures and confirm the promise of N‐CNWs for radiation‐stable electronics and optoelectronics.