Dual-Functional SiO x Cross-Point Devices Enabled by Top Electrode Engineering for Ultralow-Current Resistive Memory, Ultrasensitive Sarcosine Sensing, and Artificial Intelligence-Assisted Biomarker Classification
Abstract In the pursuit of ultra-low-power neuromorphic and bioelectronic systems, this work investigates two complementary SiOx-based resistive-switching architectures with engineered top electrodes: a Cu/CuAl structure employing metallic-filament CBRAM and an IrOx/SiOx/W cross-point architecture employing vacancy-mediated switching. Introducing a Cu–Al alloy interfacial layer into a Cu/SiOx/W structure enables ultralow-current operation with an energy consumption of ∼0.03 fJ/bit, endurance exceeding 109 program/erase (P/E) cycles, and a memory window (MW) greater than 2500. Further advancement to a three-dimensional IrOx/SiOx/W cross-point architecture significantly improves device reliability, achieving endurance beyond 1010 P/E cycles at operating currents of 10 and 50 μA while maintaining stable switching for more than 103 cycles at an ultralow current of 200 nA with an MW exceeding 3 × 104. Beyond memory functionality, the porous IrOx top electrode enables label-free biomarker sensing through its stable redox states and super-Nernstian pH response. TEM, HRTEM, and FESEM analyses reveal a porous nanostructured IrOx architecture that facilitates efficient oxygen exchange, proton transport, and redox activity. The resulting platform achieves ultrasensitive sarcosine detection with a limit of detection as low as ∼10 fM. To examine the feasibility of automated interpretation of sensing signals, current–time responses were analyzed using a Convolutional Spiking Neural Network (CSNN). The model achieved an overall classification accuracy of 95.8%, together with a sensitivity of 96.02% and specificity of 100%. These results demonstrate that complementary top-electrode-engineered SiOx architectures can provide ultralow-power memory operation, while the IrOx/SiOx/W cross-point platform further enables ultrasensitive biomarker detection and AI-assisted signal analysis, highlighting their potential for future bioelectronic and neuromorphic systems.
Authors
- Siddheswar Maikap (ORCID: https://orcid.org/0000-0002-7825-5586)
- Abhijit Aich (ORCID: https://orcid.org/0009-0005-1118-7485)
- Tingyang Shen
- Long Nguyen Minh Le (ORCID: https://orcid.org/0009-0005-5643-6078)
- Punnatorn Boonyoung
- Yi-Pin Chen
- Wachiraporn Poomeesap
- Sourav Roy
- Shih-Yin Huang
Institutions
- Concordia University Irvine (US)
- Chang Gung University (TW)
- Chang Gung Memorial Hospital (TW)
- Christ University (IN)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2026-10-15
- DOI
- https://doi.org/10.1021/acsaelm.6c01408
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science and Technology Council