Dual-Functional SiO x Cross-Point Devices Enabled by Top Electrode Engineering for Ultralow-Current Resistive Memory, Ultrasensitive Sarcosine Sensing, and Artificial Intelligence-Assisted Biomarker Classification

Abstract In the pursuit of ultra-low-power neuromorphic and bioelectronic systems, this work investigates two complementary SiOx-based resistive-switching architectures with engineered top electrodes: a Cu/CuAl structure employing metallic-filament CBRAM and an IrOx/SiOx/W cross-point architecture employing vacancy-mediated switching. Introducing a Cu–Al alloy interfacial layer into a Cu/SiOx/W structure enables ultralow-current operation with an energy consumption of ∼0.03 fJ/bit, endurance exceeding 109 program/erase (P/E) cycles, and a memory window (MW) greater than 2500. Further advancement to a three-dimensional IrOx/SiOx/W cross-point architecture significantly improves device reliability, achieving endurance beyond 1010 P/E cycles at operating currents of 10 and 50 μA while maintaining stable switching for more than 103 cycles at an ultralow current of 200 nA with an MW exceeding 3 × 104. Beyond memory functionality, the porous IrOx top electrode enables label-free biomarker sensing through its stable redox states and super-Nernstian pH response. TEM, HRTEM, and FESEM analyses reveal a porous nanostructured IrOx architecture that facilitates efficient oxygen exchange, proton transport, and redox activity. The resulting platform achieves ultrasensitive sarcosine detection with a limit of detection as low as ∼10 fM. To examine the feasibility of automated interpretation of sensing signals, current–time responses were analyzed using a Convolutional Spiking Neural Network (CSNN). The model achieved an overall classification accuracy of 95.8%, together with a sensitivity of 96.02% and specificity of 100%. These results demonstrate that complementary top-electrode-engineered SiOx architectures can provide ultralow-power memory operation, while the IrOx/SiOx/W cross-point platform further enables ultrasensitive biomarker detection and AI-assisted signal analysis, highlighting their potential for future bioelectronic and neuromorphic systems.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2026-10-15
DOI
https://doi.org/10.1021/acsaelm.6c01408
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

Dual-Functional SiO x Cross-Point Devices Enabled by Top Electrode Engineering for Ultralow-Current Resistive Memory, Ultrasensitive Sarcosine Sensing, and Artificial Intelligence-Assisted Biomarker Classification

Siddheswar Maikap, Abhijit Aich, Tingyang Shen, Long Nguyen Minh Le et al.
ACS Applied Electronic Materials
Advanced Memory and Neural Computing
article

Dual-Functional SiO x Cross-Point Devices Enabled by Top Electrode Engineering for Ultralow-Current Resistive Memory, Ultrasensitive Sarcosine Sensing, and Artificial Intelligence-Assisted Biomarker Classification

Siddheswar Maikap, Abhijit Aich, Tingyang Shen, Long Nguyen Minh Le, Punnatorn Boonyoung, Yi-Pin Chen, Wachiraporn Poomeesap, Sourav Roy, Shih-Yin Huang
article en

Abstract

Abstract In the pursuit of ultra-low-power neuromorphic and bioelectronic systems, this work investigates two complementary SiOx-based resistive-switching architectures with engineered top electrodes: a Cu/CuAl structure employing metallic-filament CBRAM and an IrOx/SiOx/W cross-point architecture employing vacancy-mediated switching. Introducing a Cu–Al alloy interfacial layer into a Cu/SiOx/W structure enables ultralow-current operation with an energy consumption of ∼0.03 fJ/bit, endurance exceeding 109 program/erase (P/E) cycles, and a memory window (MW) greater than 2500. Further advancement to a three-dimensional IrOx/SiOx/W cross-point architecture significantly improves device reliability, achieving endurance beyond 1010 P/E cycles at operating currents of 10 and 50 μA while maintaining stable switching for more than 103 cycles at an ultralow current of 200 nA with an MW exceeding 3 × 104. Beyond memory functionality, the porous IrOx top electrode enables label-free biomarker sensing through its stable redox states and super-Nernstian pH response. TEM, HRTEM, and FESEM analyses reveal a porous nanostructured IrOx architecture that facilitates efficient oxygen exchange, proton transport, and redox activity. The resulting platform achieves ultrasensitive sarcosine detection with a limit of detection as low as ∼10 fM. To examine the feasibility of automated interpretation of sensing signals, current–time responses were analyzed using a Convolutional Spiking Neural Network (CSNN). The model achieved an overall classification accuracy of 95.8%, together with a sensitivity of 96.02% and specificity of 100%. These results demonstrate that complementary top-electrode-engineered SiOx architectures can provide ultralow-power memory operation, while the IrOx/SiOx/W cross-point platform further enables ultrasensitive biomarker detection and AI-assisted signal analysis, highlighting their potential for future bioelectronic and neuromorphic systems.

ACS Applied Electronic Materials
Concordia University Irvine (US), Chang Gung University (TW), Chang Gung Memorial Hospital (TW), Christ University (IN)
National Science and Technology Council
Openalex Percentile: Top 23%
Advanced Memory and Neural Computing
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