Physically‐Modified Fluorinated Graphene/Polyether Ether Ketone Composites Exhibiting Low Dielectric Constant and Low Dielectric Loss

ABSTRACT With the explosive growth of cutting‐edge technologies such as artificial intelligence and autonomous driving, the demand for high‐performance dielectric materials in the integrated circuit industry is experiencing a sharp increase. Polyether ether ketone (PEEK), with its intrinsically low dielectric constant, has great potential for applications. However, simple and efficient strategies to obtain low‐dielectric PEEK with excellent thermal stability and mechanical properties remain largely unexplored. In this work, a physically modified fluorinated graphene (Si‐FG) was first prepared through ultrasonic stripping and sol–gel method. Subsequently, it was uniformly blended with PEEK to fabricate Si‐FG/PEEK composites. Morphological and chemical composition characterizations confirmed the successful synthesis of Si‐FG. Benefiting from the excellent properties and good dispersion of Si‐FG, the Si‐FG/PEEK composites exhibited a low dielectric constant of 2.78 and a low dielectric loss of 0.0016 at 1 MHz. Moreover, the composites exhibited enhanced thermal stability and mechanical properties, with a thermal decomposition temperature exceeding 560°C, a glass transition temperature above 151°C, a tensile strength of 105.37 MPa, and a storage modulus of 3502 MPa. This study provides a novel strategy for the application of PEEK‐based dielectric materials in integrated circuits.