Analytical Investigation of Polarization-Enhanced Transport in ScAlN/GaN HEMTs

Abstract ScAlN/GaN HEMTs have attracted significant attention for potential high-power and high-frequency applications due to their enhanced polarization properties. This work presents a physics-based analytical I–V model incorporating polarization-induced charge, threshold voltage, and carrier transport effects. The model captures the influence of Sc mole fraction and barrier thickness on device performance. Results show that Sc incorporation enhances polarization and shifts the threshold voltage toward positive values, indicating its potential for normally-OFF device design. However, higher Sc content degrades current due to increased scattering and reduced crystal stability. The model shows good agreement with experimental data and supports efficient device design and optimization.