Synergistic Passivation Effects of Li‐Al Co‐Doping Enables >15% Efficient Kesterite Photovoltaics

ABSTRACT Cation doping has been widely explored to mitigate disorder in kesterite Cu 2 ZnSn(S, Se) 4 photovoltaics, yet further efficiency gains are hindered by the inability to simultaneously suppress deep‐level defect clusters, enhance carrier concentration, and preserve bulk transport properties. Here, we report a Li‐Al co‐doping strategy that introduces synergistic passivation effects (SPEs) within the absorber. Unlike simple additive doping, the co‐substitution of Li + and Al 3+ at Zn 2+ sites with Li preferentially occupying Zn sites in the presence of Al, as confirmed by first‐principles density functional theory (DFT) open‐circuit voltage calculations, enables a unique charge self‐compensation and lattice strain balance mechanism, which collectively reshapes the defect landscape. This approach effectively suppresses detrimental [2Cu Zn +Sn Zn ] clusters while promoting beneficial [V Cu +Zn Cu ] clusters, and concurrently increases carrier concentration and built‐in potential. Comprehensive spectroscopic and electrical characterizations reveal that the SPEs originate from energetically favorable defect complexes such as [Li Zn +Al Zn ], enabling atomic‐scale tuning of recombination dynamics. As a result, the champion device achieves a notable efficiency of 15.49% with a high open‐circuit voltage ( V OC ) of 0.608 V ( V OC,def = 0.286 V), and exceptional operational stability over 3910 h. This work establishes a generalizable materials design principle, i.e., engineering synergistic charge compensation between complementary dopants for overcoming voltage deficits in multi‐cation semiconductors beyond kesterites.

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Publication Details

Journal
Advanced Functional Materials
Published
2026-10-15
DOI
https://doi.org/10.1002/adfm.79092
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

Synergistic Passivation Effects of Li‐Al Co‐Doping Enables >15% Efficient Kesterite Photovoltaics

Xuegong Yu, Sixin Wu, Zhenghua Su, Yanping Song et al.
Advanced Functional Materials
Chalcogenide Semiconductor Thin Films
article

Synergistic Passivation Effects of Li‐Al Co‐Doping Enables >15% Efficient Kesterite Photovoltaics

Xuegong Yu, Sixin Wu, Zhenghua Su, Yanping Song, Xinyu Zhang, Jingyi Meng, Bin Yao, Sisi Jia, Chun Guo, Dipeng Xu, Lunkan Shen, Busen Zhai, Huanhuan Sun, Wenjie Zhu, Yixiang Xiao, Linxin Gao
article en

Abstract

ABSTRACT Cation doping has been widely explored to mitigate disorder in kesterite Cu 2 ZnSn(S, Se) 4 photovoltaics, yet further efficiency gains are hindered by the inability to simultaneously suppress deep‐level defect clusters, enhance carrier concentration, and preserve bulk transport properties. Here, we report a Li‐Al co‐doping strategy that introduces synergistic passivation effects (SPEs) within the absorber. Unlike simple additive doping, the co‐substitution of Li + and Al 3+ at Zn 2+ sites with Li preferentially occupying Zn sites in the presence of Al, as confirmed by first‐principles density functional theory (DFT) open‐circuit voltage calculations, enables a unique charge self‐compensation and lattice strain balance mechanism, which collectively reshapes the defect landscape. This approach effectively suppresses detrimental [2Cu Zn +Sn Zn ] clusters while promoting beneficial [V Cu +Zn Cu ] clusters, and concurrently increases carrier concentration and built‐in potential. Comprehensive spectroscopic and electrical characterizations reveal that the SPEs originate from energetically favorable defect complexes such as [Li Zn +Al Zn ], enabling atomic‐scale tuning of recombination dynamics. As a result, the champion device achieves a notable efficiency of 15.49% with a high open‐circuit voltage ( V OC ) of 0.608 V ( V OC,def = 0.286 V), and exceptional operational stability over 3910 h. This work establishes a generalizable materials design principle, i.e., engineering synergistic charge compensation between complementary dopants for overcoming voltage deficits in multi‐cation semiconductors beyond kesterites.

Advanced Functional Materials
Zhejiang Normal University (CN), Henan University (CN), Shenzhen University (CN), Jilin University (CN), Ningbo Institute of Industrial Technology (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 24%
Chalcogenide Semiconductor Thin Films
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