Synergistic Passivation Effects of Li‐Al Co‐Doping Enables >15% Efficient Kesterite Photovoltaics
ABSTRACT Cation doping has been widely explored to mitigate disorder in kesterite Cu 2 ZnSn(S, Se) 4 photovoltaics, yet further efficiency gains are hindered by the inability to simultaneously suppress deep‐level defect clusters, enhance carrier concentration, and preserve bulk transport properties. Here, we report a Li‐Al co‐doping strategy that introduces synergistic passivation effects (SPEs) within the absorber. Unlike simple additive doping, the co‐substitution of Li + and Al 3+ at Zn 2+ sites with Li preferentially occupying Zn sites in the presence of Al, as confirmed by first‐principles density functional theory (DFT) open‐circuit voltage calculations, enables a unique charge self‐compensation and lattice strain balance mechanism, which collectively reshapes the defect landscape. This approach effectively suppresses detrimental [2Cu Zn +Sn Zn ] clusters while promoting beneficial [V Cu +Zn Cu ] clusters, and concurrently increases carrier concentration and built‐in potential. Comprehensive spectroscopic and electrical characterizations reveal that the SPEs originate from energetically favorable defect complexes such as [Li Zn +Al Zn ], enabling atomic‐scale tuning of recombination dynamics. As a result, the champion device achieves a notable efficiency of 15.49% with a high open‐circuit voltage ( V OC ) of 0.608 V ( V OC,def = 0.286 V), and exceptional operational stability over 3910 h. This work establishes a generalizable materials design principle, i.e., engineering synergistic charge compensation between complementary dopants for overcoming voltage deficits in multi‐cation semiconductors beyond kesterites.
Authors
- Xuegong Yu (ORCID: https://orcid.org/0000-0002-0354-8501)
- Sixin Wu (ORCID: https://orcid.org/0009-0006-0266-5438)
- Zhenghua Su (ORCID: https://orcid.org/0000-0003-2137-3933)
- Yanping Song (ORCID: https://orcid.org/0000-0001-8088-7040)
- Xinyu Zhang (ORCID: https://orcid.org/0000-0002-7427-5774)
- Jingyi Meng
- Bin Yao (ORCID: https://orcid.org/0000-0003-3142-4570)
- Sisi Jia
- Chun Guo
- Dipeng Xu
- Lunkan Shen
- Busen Zhai
- Huanhuan Sun (ORCID: https://orcid.org/0009-0008-3029-2645)
- Wenjie Zhu
- Yixiang Xiao
- Linxin Gao
Institutions
- Zhejiang Normal University (CN)
- Henan University (CN)
- Shenzhen University (CN)
- Jilin University (CN)
- Ningbo Institute of Industrial Technology (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2026-10-15
- DOI
- https://doi.org/10.1002/adfm.79092
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China