Row–Column Addressable Monolayer Graphene/SiO2/Si Heterostructure Array for Visible-to-Near-Infrared Imaging with Suppressed Dark Current

Abstract Image sensor arrays built from two-dimensional (2D) materials are emerging as enablers of next-generation optoelectronic systems, yet their development has been constrained by the lack of readout architectures specifically tailored to atomically thin channels. Here, we demonstrate an 8 × 8 monolithic array of monolayer graphene/silicon dioxide/silicon (Gr/SiO2/Si) metal-insulator-semiconductor (MIS) photodetector that employs a row–column addressable scheme, drastically reducing the required interconnects from 64 to only 16. By inserting a silicon dioxide dielectric layer between graphene and silicon, the dark current is suppressed by 3 orders of magnitude, and the highest specific detectivity measured among the devices reaches 1.076 × 1011 cm Hz1/2 W–1. All 64 pixels exhibit uniform photoresponse across the visible to near-infrared spectral range. Using mask-projection imaging, we faithfully reconstruct alphabetic optical patterns, confirming the array’s imaging fidelity. This work holds promise for the development of various types of two-dimensional material-based array devices.