Tribological behavior of single-crystal SiC under the action of Fe3O4/CuO composite catalyst
To address the low processing efficiency of Fenton chemical mechanical polishing of single-crystal SiC, this paper proposes preparing a Fe 3 O 4 /CuO composite Fenton catalyst and utilizing the redox reaction between Fe 3+ and Cu in the reaction system to increase the generation rate of Fe 2+ and hydroxyl radicals (•OH). The synergistic mechanism by which the two metal oxides in the Fe 3 O 4 /CuO composite catalyst catalyze H 2 O 2 to produce •OH was analyzed. The catalytic performance of different catalyst particles (Fe 3 O 4 , CuO, Fe 3 O 4 +CuO, Fe 3 O 4 /CuO) in Fenton or Fenton-like reactions was studied. The effect of the composite catalyst on the material removal behavior of single-crystal SiC was explored, and the material removal mechanism of single-crystal SiC under the Fe 3 O 4 /CuO composite catalyst was revealed. The results show that the tight heterointerface of the two Fe 3 O 4 /CuO phases may facilitate interfacial charge transfer between Fe 3+ and Cu + active species, enhance the •OH generation ability, improve the surface oxidation level in the frictional contact area, and promote the synergistic coupling of oxidative modification and mechanical removal. Under the Fe 3 O 4 /CuO system, the wear area of single-crystal SiC reaches 3859.3 μm 2 , which is increased by 240.8%, 80.0%, and 18.3% compared with Fe 3 O 4 , CuO, and Fe 3 O 4 +CuO, respectively. This study provides a new technical scheme for bimetallic synergistic Fenton catalysts in chemical mechanical polishing slurry for single-crystal SiC.
Authors
- Qiusheng Yan (ORCID: https://orcid.org/0000-0001-5497-890X)
- Shengquan Wang (ORCID: https://orcid.org/0000-0002-3841-7552)
- Junqiang Lin (ORCID: https://orcid.org/0000-0002-6877-6847)
- Tao Peng
- Shibo Han
- Jisheng Pan
- Peizhen Zhang
Institutions
- Guangdong University of Technology (CN)
- Guangdong University of Science and Technology (CN)
Publication Details
- Journal
- Materials Science in Semiconductor Processing
- Published
- 2026-10-14
- DOI
- https://doi.org/10.1016/j.mssp.2026.111285
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Guangdong University of Technology