Analysis on Optoelectronic Properties of ZnO/TiO₂ Heterostructure-Based Phototransistors with Semiconductor Process and Device Characterizations

Authors

Publication Details

Journal
HAL (Le Centre pour la Communication Scientifique Directe)
Published
2026-10-13
DOI
https://doi.org/10.59324/stss.2026.3(10).06
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
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article

Analysis on Optoelectronic Properties of ZnO/TiO₂ Heterostructure-Based Phototransistors with Semiconductor Process and Device Characterizations

Hsu Myat Tin Swe, Devasis Pradhan, Lei Lei Yin Win, Mya Mya Aye et al.
HAL (Le Centre pour la Communication Scientifique Directe)
ZnO doping and properties
article

Analysis on Optoelectronic Properties of ZnO/TiO₂ Heterostructure-Based Phototransistors with Semiconductor Process and Device Characterizations

Hsu Myat Tin Swe, Devasis Pradhan, Lei Lei Yin Win, Mya Mya Aye, Zin Nwe Nyo Htun, Hla Myo Tun
article en

Abstract

No abstract available for this paper.
HAL (Le Centre pour la Communication Scientifique Directe)
Openalex Percentile: Top 28%
ZnO doping and properties
DOISourceOpenAlex
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