Multi-state switching of topological magnetic textures via enhancing ferroelectric polarization in van der Waals multiferroic heterostructure LaBr/In2Se3

Topological magnetic textures hold great promise for non-volatile memory applications, owing to their topological stability and low energy consumption. Conventional manipulations focus on the creation/annihilation of one topological state or switching between two states, however, the multi-state switching remains largely unexplored. Here, we proposed that enhancing ferroelectric polarization can drive multi-state switching of topological magnetic textures, as evidenced in van der Waals multiferroic heterostructures LaBr/In2Se3. Using first-principles calculations and micromagnetic simulations, we revealed that increasing In2Se3 thickness triggers phase transitions among three distinct topological magnetic textures, including bimeron, trimeron, and skyrmionium-like structure. The intrinsic mechanism of the phase transitions originates from the competition among LaBr's exchange interaction, Dzyaloshinskii-Moriya interaction, and magnetic anisotropy energy, which are significantly tuned by the enhanced ferroelectric polarization of In2Se3. Our work offers a theoretical guidance for voltage-controlled multi-state switching of topological magnetic textures, which sheds lights on the applications of topological spintronics.

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Publication Details

Journal
The Journal of Chemical Physics
Published
2026-10-14
DOI
https://doi.org/10.1063/5.0333428
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Multi-state switching of topological magnetic textures via enhancing ferroelectric polarization in van der Waals multiferroic heterostructure LaBr/In2Se3

Churen Gui, Jun Chen, Han Pan, Shu-Zong Li et al.
The Journal of Chemical Physics
Magnetic properties of thin films
article

Multi-state switching of topological magnetic textures via enhancing ferroelectric polarization in van der Waals multiferroic heterostructure LaBr/In2Se3

Churen Gui, Jun Chen, Han Pan, Shu-Zong Li, Wei‐Bing Zhang, Zhenqing Li, Bo Huang
article en

Abstract

Topological magnetic textures hold great promise for non-volatile memory applications, owing to their topological stability and low energy consumption. Conventional manipulations focus on the creation/annihilation of one topological state or switching between two states, however, the multi-state switching remains largely unexplored. Here, we proposed that enhancing ferroelectric polarization can drive multi-state switching of topological magnetic textures, as evidenced in van der Waals multiferroic heterostructures LaBr/In2Se3. Using first-principles calculations and micromagnetic simulations, we revealed that increasing In2Se3 thickness triggers phase transitions among three distinct topological magnetic textures, including bimeron, trimeron, and skyrmionium-like structure. The intrinsic mechanism of the phase transitions originates from the competition among LaBr's exchange interaction, Dzyaloshinskii-Moriya interaction, and magnetic anisotropy energy, which are significantly tuned by the enhanced ferroelectric polarization of In2Se3. Our work offers a theoretical guidance for voltage-controlled multi-state switching of topological magnetic textures, which sheds lights on the applications of topological spintronics.

The Journal of Chemical PhysicsVol. 165(14)
Changsha University of Science and Technology (CN), Southeast University (CN)
National Natural Science Foundation of China, Fok Ying Tung Education Foundation, Natural Science Foundation for Distinguished Young Scholars of Hunan Province
Openalex Percentile: Top 20%
Magnetic properties of thin films
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