Multiple Synergistic Effects Enabling Efficient Kesterite Solar Cells via Introducing a Cu 2 O‐Bi 2 O 3 Sacrificial Interlayer

ABSTRACT Synergistic optimization of unwanted bulk and interface defects has been one of the effective strategies for high‐efficiency kesterite Cu 2 ZnSn(S, Se) 4 solar cells. Here, a novel multiple synergistic optimization strategy is developed by introducing a Cu 2 O‐Bi 2 O 3 sacrificial interlayer. This interlayer can inhibit the decomposition reaction of the back interface. Then Cu + can supplement Cu‐loss at the back interface and help achieve uniform elemental distributions. Another part of Cu + can also diffuse into the MoSe 2 layer and affect its properties. Meanwhile, Bi 3+ can bidirectionally diffuse into the bulk Cu 2 ZnSn(S, Se) 4 absorbers and the MoSe 2 layers. A portion of Bi 3+ ions in the bulk enables the formation of Cu 2 Zn(Sn, Bi)(S, Se) 4 by substituting Sn 4+ with Bi 3+ , improving its properties such as crystallinity, bulk defects, hole carrier concentration, and band gap. The other portion can diffuse into the MoSe 2 layer, where, together with Cu + , they enhance its charge transport ability and adjust its band structure. These processes collectively enlarge the band offset of the Cu 2 Zn(Sn, Bi)(S, Se) 4 /MoSe 2 :(Cu, Bi) interface, facilitate carrier separation, suppress interface recombination, and thus enable the DMSO‐processed kesterite devices to achieve a high efficiency of 13.53%. Our findings provide new strategies for optimizing the performance of kesterite solar cells, which can be applicable to enhance the performance of other devices.

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Publication Details

Journal
Carbon Energy
Published
2026-10-13
DOI
https://doi.org/10.1002/cey2.70327
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

Multiple Synergistic Effects Enabling Efficient Kesterite Solar Cells via Introducing a Cu 2 O‐Bi 2 O 3 Sacrificial Interlayer

Guonan Cui, Yanchun Yang, Junjie Bao, Letu Siqin et al.
Carbon Energy
Chalcogenide Semiconductor Thin Films
article

Multiple Synergistic Effects Enabling Efficient Kesterite Solar Cells via Introducing a Cu 2 O‐Bi 2 O 3 Sacrificial Interlayer

Guonan Cui, Yanchun Yang, Junjie Bao, Letu Siqin, Yongjun Cao, Lulu Bai, Zhihui Gong, Yanqing Liu, Yuze Sun, Shuyu Li, Xu Wang, Haifeng Lu, Chengjun Zhu
article en

Abstract

ABSTRACT Synergistic optimization of unwanted bulk and interface defects has been one of the effective strategies for high‐efficiency kesterite Cu 2 ZnSn(S, Se) 4 solar cells. Here, a novel multiple synergistic optimization strategy is developed by introducing a Cu 2 O‐Bi 2 O 3 sacrificial interlayer. This interlayer can inhibit the decomposition reaction of the back interface. Then Cu + can supplement Cu‐loss at the back interface and help achieve uniform elemental distributions. Another part of Cu + can also diffuse into the MoSe 2 layer and affect its properties. Meanwhile, Bi 3+ can bidirectionally diffuse into the bulk Cu 2 ZnSn(S, Se) 4 absorbers and the MoSe 2 layers. A portion of Bi 3+ ions in the bulk enables the formation of Cu 2 Zn(Sn, Bi)(S, Se) 4 by substituting Sn 4+ with Bi 3+ , improving its properties such as crystallinity, bulk defects, hole carrier concentration, and band gap. The other portion can diffuse into the MoSe 2 layer, where, together with Cu + , they enhance its charge transport ability and adjust its band structure. These processes collectively enlarge the band offset of the Cu 2 Zn(Sn, Bi)(S, Se) 4 /MoSe 2 :(Cu, Bi) interface, facilitate carrier separation, suppress interface recombination, and thus enable the DMSO‐processed kesterite devices to achieve a high efficiency of 13.53%. Our findings provide new strategies for optimizing the performance of kesterite solar cells, which can be applicable to enhance the performance of other devices.

Carbon Energy
Inner Mongolia Normal University (CN), Inner Mongolia University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Inner Mongolia
Openalex Percentile: Top 23%
Chalcogenide Semiconductor Thin Films
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