Enhanced electrochemical performance of boron-doped hierarchical bismuth oxide nanosheets for asymmetric supercapacitor applications
In this study, we present a hydrothermal synthesis of B-doped Bi 2 O 3 (B = 0, 0.025 & 0.05) hierarchical Nanosheets. The synthesised nanosheets were analysed to verify the phase, functional groups, morphology, structure, and elemental analysis, namely by XRD, FTIR, FESEM, HR-TEM, XPS and BET, respectively. The cyclic voltammetry, galvanostatic charge and discharge, electrochemical impedance spectroscopy and cyclic stability metrics of the synthesised material were examined in both three- and two-electrode setups. The doping of B helps Bismuth oxide to enhance its electrochemical performance and achieved specific capacitances of 157.1 F/g, 283.3 F/g and 538.3 F/g at a scan rate of 10 mV/s for BB NS, BB1 NS and BB2 NS, respectively. Further, the fabricated ASC device BB2 NS // AC obtained a specific capacitance of 125 F/g at a scan rate of 10 mV/s and showed an exceptional stability of 90.2% retention even after 10,000 cycles. Furthermore, the BB2 NS//AC device provides an impressive energy density of 54.8 Wh/Kg and a great power density of 794.5 W/kg. Overall, the results indicated that the as-assembled BB2 NS//AC device exhibits high conductivity, substantial storage capacity, cost-effective electrodes, and improved stability. The ASC device is considered an excellent electrode material for applications in supercapacitors.
Authors
- R. Gokulakrishna
- F. Kousi
- S. Sudhahar
- L. Allwin Joseph
- Jelise Maria Singarayar
- D. Shanmugapriya
- S.E. Minhaaj
- G. Lalitha
- N. Abdulkalam
Institutions
- Alagappa University (IN)
- University of Tarapacá (CL)
- University of Madras (IN)
- University of La Serena (CL)
Publication Details
- Journal
- Materials Science and Engineering B
- Published
- 2026-10-13
- DOI
- https://doi.org/10.1016/j.mseb.2026.119943
- Primary Topic
- Supercapacitor Materials and Fabrication
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Science and Engineering Research Board