A comprehensive overview of mission profile based reliability assessment for GaN based converters

This paper presents a mission profile (MP)-based reliability analysis framework for GaN-based power converters used in high-performance applications such as electric vehicles, renewable energy systems, and consumer electronics. GaN-based converters offer high efficiency, high power density, and the capability to operate at high switching frequencies. However, their long-term reliability and failure mechanisms have not yet been fully explored. Reliability analysis techniques developed for conventional Si-based converters are not directly applicable to GaN-based converters due to their distinct material properties and operating characteristics. In addition, although SiC devices belong to the wide-bandgap semiconductor family, their reliability evaluation approaches differ from those required for GaN-based converters. This study provides a systematic overview of MP-based reliability assessment methods for GaN-based converters. Various approaches for lifetime prediction are examined, and the associated challenges in applying these methods to GaN systems are discussed. The key factors influencing converter lifetime, including switching stress, MP variations, PCB parasitics, and operating conditions, are identified. The proposed approach enables an improved understanding of system-level reliability and supports the development of more accurate lifetime prediction methodologies for GaN-based power converters.