Wafer-scale low-symmetry graphene moiré superlattice for integrated quantum rectifiers

Low-symmetry materials unlock rich Berry curvature physics and anomalous transport phenomena that are forbidden in high-symmetry quantum systems through rigorous crystalline symmetry constraints. Current approaches rely on external fields or complex heterogeneous stacking to break crystalline symmetries, which hinders scalable device integration. In this work, we demonstrate surface premelting engineering to create wafer-scale low-symmetry graphene on germanium-110 [Ge(110)]. Controlled premelting forms striped germanium surface patterns that reduce graphene symmetry from D 6h to C 1v , producing a room-temperature nonlinear Hall conductivity of ~11 micrometers per volt per ohm. First-principles calculations attribute this to originating from overtilted massive Dirac cones of hybridized germanium bands and the graphene Dirac cone. Integrated nonlinear Hall rectifiers generate >20 millivolts of output from radio frequency input and drive commercial voltage boosters and light-emitting diodes, establishing a complementary metal-oxide semiconductor–compatible route toward wafer-scale nonlinear quantum devices.

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Publication Details

Journal
Science
Published
2026-10-08
DOI
https://doi.org/10.1126/science.aeh3915
Primary Topic
Graphene research and applications
Type
article
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article

Wafer-scale low-symmetry graphene moiré superlattice for integrated quantum rectifiers

Yunyu Hong, Pan He, Pai Li, Ziao Tian et al.
Science
Graphene research and applications
article

Wafer-scale low-symmetry graphene moiré superlattice for integrated quantum rectifiers

Yunyu Hong, Pan He, Pai Li, Ziao Tian, Xufeng Kou, Hai‐Zhou Lu, Zengfeng Di, Miao Zhang, Yongfeng Mei, Lin He, Zhenhao Gong, Paul Kim-Ho Chu, Zhongying Xue, Hao Sheng, Hao Wu, Zirui Wang, Haiyang Zhang, Jiuming Liu, Shujie Tang, Shipeng Lu, Wenhao Tan, Haitao Jiang
article en

Abstract

Low-symmetry materials unlock rich Berry curvature physics and anomalous transport phenomena that are forbidden in high-symmetry quantum systems through rigorous crystalline symmetry constraints. Current approaches rely on external fields or complex heterogeneous stacking to break crystalline symmetries, which hinders scalable device integration. In this work, we demonstrate surface premelting engineering to create wafer-scale low-symmetry graphene on germanium-110 [Ge(110)]. Controlled premelting forms striped germanium surface patterns that reduce graphene symmetry from D 6h to C 1v , producing a room-temperature nonlinear Hall conductivity of ~11 micrometers per volt per ohm. First-principles calculations attribute this to originating from overtilted massive Dirac cones of hybridized germanium bands and the graphene Dirac cone. Integrated nonlinear Hall rectifiers generate >20 millivolts of output from radio frequency input and drive commercial voltage boosters and light-emitting diodes, establishing a complementary metal-oxide semiconductor–compatible route toward wafer-scale nonlinear quantum devices.

ScienceVol. 394(6820)
City University of Hong Kong (HK), Chinese Academy of Sciences (CN), Fudan University (CN), Beijing Normal University (CN), Southern University of Science and Technology (CN), ShanghaiTech University (CN), Shanghai Institute of Microsystem and Information Technology (CN), University of Chinese Academy of Sciences (CN), State Key Laboratory of Surface Physics, Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (CN)
Openalex Percentile: Top 28%
Graphene research and applications
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