Dual-Mode Photodetection and Neuromorphic Memory with PTCDI-C8/C8-BTBT Organic Heterojunctions

Abstract Merging optoelectronic sensing with synaptic emulation is critical for the progression of artificial intelligence. Herein, we report a bias-configurable dual-mode optoelectronic device engineered from a PTCDI-C8/C8-BTBT organic heterojunction, enabling a reversible transition between photodetection and optoelectronic synaptic memory. Under zero source-drain bias operation, the device functions as a high-performance photodetector, exhibiting a responsivity of 3.0 mA W–1 and a specific detectivity of 7.97 × 1011 Jones, thereby facilitating advanced multiwavelength imaging and optical communication applications. Alternatively, in the synaptic mode, the device exhibits a gate-tunable bipolar photoresponse that successfully emulates excitatory and inhibitory postsynaptic currents. Consequently, this work presents a viable pathway for integrating photodetection and memory capabilities within organic optoelectronic frameworks.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2026-10-08
DOI
https://doi.org/10.1021/acs.jpclett.6c02730
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
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article

Dual-Mode Photodetection and Neuromorphic Memory with PTCDI-C8/C8-BTBT Organic Heterojunctions

Junliang Yang, Jia Sun, Chenxing Jin, Guansong Qiu et al.
The Journal of Physical Chemistry Letters
Advanced Memory and Neural Computing
article

Dual-Mode Photodetection and Neuromorphic Memory with PTCDI-C8/C8-BTBT Organic Heterojunctions

Junliang Yang, Jia Sun, Chenxing Jin, Guansong Qiu, Wanrong Liu, Xiaofang Shi, Fuhao He
article en

Abstract

Abstract Merging optoelectronic sensing with synaptic emulation is critical for the progression of artificial intelligence. Herein, we report a bias-configurable dual-mode optoelectronic device engineered from a PTCDI-C8/C8-BTBT organic heterojunction, enabling a reversible transition between photodetection and optoelectronic synaptic memory. Under zero source-drain bias operation, the device functions as a high-performance photodetector, exhibiting a responsivity of 3.0 mA W–1 and a specific detectivity of 7.97 × 1011 Jones, thereby facilitating advanced multiwavelength imaging and optical communication applications. Alternatively, in the synaptic mode, the device exhibits a gate-tunable bipolar photoresponse that successfully emulates excitatory and inhibitory postsynaptic currents. Consequently, this work presents a viable pathway for integrating photodetection and memory capabilities within organic optoelectronic frameworks.

The Journal of Physical Chemistry Letters
Central South University (CN), Peking University (CN)
Openalex Percentile: Top 23%
Advanced Memory and Neural Computing
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