Direct-Write Defects for Bias-Free Two-Dimensional Optical Synapses Towards In-Sensor Motion Detection

Abstract Optoelectronic synaptic devices, particularly those based on two-dimensional (2D) transition metal dichalcogenides (TMDs), emulate biological synaptic functions, promising in neuromorphic computing. However, most TMD-based synapses rely on external gate or bias control, leading to complicated device architecture and high-power consumption. Here, we demonstrate a gate-free and bias-free optical synapses, based on monolayer molybdenum disulfide (MoS2) homojunction with its counterpart made of spatially controlled sulfur (S) vacancies, obtained through laser patterning. By precisely controlling the defect density from 0.15 nm–2 to 0.78 nm–2, we effectively modify the synaptic memory from a short retention time (∼125 s) to a long retention time (>450 s). We further demonstrate neuromorphic computing from image denoising and recognition to motion trajectory prediction for autonomous driving, highlighting the device’s applicability in on-chip visual preprocessing. This work shows great promise for neuromorphic computing by offering a scalable platform for energy-efficient optoelectronic neuromorphic technology.

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Publication Details

Journal
Nano Letters
Published
2026-10-05
DOI
https://doi.org/10.1021/acs.nanolett.6c03873
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
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article

Direct-Write Defects for Bias-Free Two-Dimensional Optical Synapses Towards In-Sensor Motion Detection

Zhengtang Luo, Tsz Wing Tang, Mohsen Tamtaji, Yaxuan Li et al.
Nano Letters
Advanced Memory and Neural Computing
article

Direct-Write Defects for Bias-Free Two-Dimensional Optical Synapses Towards In-Sensor Motion Detection

Zhengtang Luo, Tsz Wing Tang, Mohsen Tamtaji, Yaxuan Li, Zhaoli Gao, Jiawen You, Yunxia Hu, Sheng Pei, Jinghan Shen, Md Saif Hasan, yuxiang Li, Nan Zhang, GuanHua Chen, Jun Wang
article en

Abstract

Abstract Optoelectronic synaptic devices, particularly those based on two-dimensional (2D) transition metal dichalcogenides (TMDs), emulate biological synaptic functions, promising in neuromorphic computing. However, most TMD-based synapses rely on external gate or bias control, leading to complicated device architecture and high-power consumption. Here, we demonstrate a gate-free and bias-free optical synapses, based on monolayer molybdenum disulfide (MoS2) homojunction with its counterpart made of spatially controlled sulfur (S) vacancies, obtained through laser patterning. By precisely controlling the defect density from 0.15 nm–2 to 0.78 nm–2, we effectively modify the synaptic memory from a short retention time (∼125 s) to a long retention time (>450 s). We further demonstrate neuromorphic computing from image denoising and recognition to motion trajectory prediction for autonomous driving, highlighting the device’s applicability in on-chip visual preprocessing. This work shows great promise for neuromorphic computing by offering a scalable platform for energy-efficient optoelectronic neuromorphic technology.

Nano Letters
Beijing Institute of Technology (CN), Chinese University of Hong Kong (HK), Hong Kong University of Science and Technology (HK), University of Hong Kong (HK)
Openalex Percentile: Top 22%
Advanced Memory and Neural Computing
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Direct-Write Defects for Bias-Free Two-Dimensional Optical Synapses Towards In-Sensor Motion Detection — Zhengtang Luo, Tsz Wing Tang, et al. · Nano Letters (2026) | TGRS Research Map | TGRS