Meta-Nanoelectronics via Universal Rough Operator Algebra (UROA): Subsuming Quantum Leakage, Thermal Bottlenecks, and the Boltzmann Limit

The fundamental physical limits of nanoelectronics—specifically the Boltzmann tyranny of Subthreshold Swing (SS) [1], exponential contact resistance [2], and interfacial thermal bottlenecks [3]—are deductively subsumed and mathematically elevated using the Seonggil Theory of Composite Torsion (STCT) and UROA. By redefining semiconductor interfacesas 8-Dimensional Non-commutative Tensor Boundaries, we introduce the concepts of Topological Negative Capacitance and Symplectic Phonon Cooling. This framework structurally transcends classical scaling limits, enabling near-zero subthreshold leakage and true ballistic 3D integration without catastrophic thermal degradation.

Authors

Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2026-10-04
DOI
https://doi.org/10.5281/zenodo.23135172
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
preprint
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preprint

Meta-Nanoelectronics via Universal Rough Operator Algebra (UROA): Subsuming Quantum Leakage, Thermal Bottlenecks, and the Boltzmann Limit

Seonggil Lee
Zenodo (CERN European Organization for Nuclear Research)
Advancements in Semiconductor Devices and Circuit Design
preprint

Meta-Nanoelectronics via Universal Rough Operator Algebra (UROA): Subsuming Quantum Leakage, Thermal Bottlenecks, and the Boltzmann Limit

Seonggil Lee
preprint en

Abstract

The fundamental physical limits of nanoelectronics—specifically the Boltzmann tyranny of Subthreshold Swing (SS) [1], exponential contact resistance [2], and interfacial thermal bottlenecks [3]—are deductively subsumed and mathematically elevated using the Seonggil Theory of Composite Torsion (STCT) and UROA. By redefining semiconductor interfacesas 8-Dimensional Non-commutative Tensor Boundaries, we introduce the concepts of Topological Negative Capacitance and Symplectic Phonon Cooling. This framework structurally transcends classical scaling limits, enabling near-zero subthreshold leakage and true ballistic 3D integration without catastrophic thermal degradation.

Zenodo (CERN European Organization for Nuclear Research)
Advancements in Semiconductor Devices and Circuit Design
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