Improving properties and performance solar cell of nanostructured tin sulfide by aluminum doping

Aluminum dopant Tin Sulfide than (p-SnS /n-Si and p-SnS: Al / n-Si) thin films are deposited with thickness (500±20) nm onto glass and Si substrates by thermal evaporation procedure under a vacuum of 5*10-6 mbar with deposition rate 1nm/sec. The effect of different Al ratios (1%,2% and 3%) on the nanostructure SnS thin film and (p-SnS /n-Si) hetero junction characteristics are examined. The structural films properties examined through X-ray diffraction showed that SnS film are poly crystallin with increase crystallite size from (21.04 to 27.7) nm with increasing Al ratio. The optical properties demonstration excellent absorbance for film doped with 3% Al beside reduced energy gaps from 1.6 toward 1.44 eV. Hall effects measurement indicated wholly film equipped pure besides doping had p-type conductive, Further, the lower resistivity of 4.77×102 (Ω.cm) besides maximum carrier’s concentrate of 2.81×1016 (cm-3) for doped 3% (Al) films. Below illumination the (I-V) characteristics of hetero junction via occurrence 100 mW/cm2 powers density support presented that heterojunction (p-SnS: 3%Al / n-Si) has maximum efficiency (η =5.512 %). which is enhanced by the optimized nanostructure and uniform nanoparticle distribution.