Enhanced resistive switching behavior in RF-sputtered Sm2Hf2O7 thin films through controlled process conditions

Sm 2 Hf 2 O 7 RRAM devices were developed via RF sputtering, and key factors including film thickness, thermal treatment, and post-metallization annealing were systematically evaluated in terms of their impact on switching characteristics. The pyrochlore structure of Sm 2 Hf 2 O 7 contains oxygen-related defects, which may contribute to the formation and rupture of conductive pathways during resistive switching. The results show that thermal treatment improves switching stability, while PMA further improves device performance, which is correlated with interfacial modification and elemental redistribution observed after PMA, demonstrating switching voltages of −2.11V/1.22 V, a switching endurance of up to 1688 cycles, a resistance ratio of 10 1 –10 2 , and stable data retention exceeding 10 4 s at both 25°C and 85°C. The results indicate that SHO RRAM devices are strong candidates for reliable non-volatile memory applications.