Dynamically Reconfigurable Multibit Modulator Enabled by Programmable Anti‐Ambipolar Memory Transistors

ABSTRACT With the emergence of intensified edge communication environments, development of a modulation scheme that achieves high bandwidth efficiency while mitigating signal collision becomes essential. Meanwhile, there is a growing demand for energy‐efficient, compact modulator hardware to support such systems. Here, we propose an anti‐ambipolar memory transistor (AAMT) as an advanced modulator, which features near‐ideal symmetrical transfer characteristics and independent programmability of p‐ and n‐type channels. By leveraging the separate floating‐gate structure and a gate dielectric stack capable of withstanding electric fields up to 8 MV cm −1 , bell‐shaped transfer curves are systematically controlled over a wide range and retained for up to 90 000 s. Building on this capability, an AAMT enables device‐level reconfigurable switching among amplitude, frequency, and phase shift keying (ASK, FSK, PSK), as well as multiple‐ASK (MASK), at fixed voltage via simple programming without requiring additional selectors, significantly reducing the energy consumption for switching per bit. Two AAMTs connected in parallel demonstrate bandwidth‐efficient 3‐bit modulation, featuring dynamically reconfigurable keying outputs, potentially mitigating signal interference. Moreover, three parallel‐connected AAMTs enable the first demonstration of a six‐fold frequency multiplication using non‐Si devices. These results indicate the feasibility of the AAMT for preliminary edge communication applications with a reduced number of devices.