Eigenvalue-based analysis of the dynamic responses of a porous semiconductor medium

Abstract This paper studies the dynamic responses of a porous semiconductor medium subjected to a pulsed thermal load using the eigenvalue approach. A coupled generalized photothermoelastic model is developed to describe the interactions among void volume fraction, carrier density, temperature, displacement, and stress. Due to the exponentially decaying heat flux, the boundary surface is assumed to be traction-free. The governing formulations are nondimensionalized, transformed into the Laplace domain, and expressed in matrix–vector form. The eigenvalue method is then applied to obtain the solution, while the inverse Laplace transforms is performed numerically using the Riemann-sum approximations. Numerical results illustrate the effects of thermal relaxation time and pulsed heat-flux parameters on the main physical fields. The findings show that heat flux time and thermal relaxation significantly influence the transient behaviors of the porous semiconductor medium.