Experimental Development of a Radiative Thermal Memristor

Abstract We report the experimental realization of a radiative thermal memristor made of a 200-nm-thick VO2 film exchanging heat by far-field radiation with a heat-flux sensor. This two-terminal device exploits the metal–insulator transition and thermal hysteresis of VO2, exhibiting large emissivity variations and a hysteresis width of 5 K around the mean temperature T0 = 338.7 K. Under low-frequency sinusoidal modulation of the VO2 temperature around T0, we observe a pinched, infinity-shaped Lissajous curve for the heat flux versus temperature difference. From this characteristic curve we extract a history-dependent thermal memristance with clear ON and OFF states defined by the emissivity contrast between its insulating and metallic phases. These memristive states remain robust over multiple cycles, enabling binary information encoding in a purely radiative configuration. Our results demonstrate the operation of a contactless thermal memristor and provide a fundamental element for thermal memories, thermal neurons, and neuromorphic networks analogous to their electrical counterparts.

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Publication Details

Journal
Nano Letters
Published
2026-09-29
DOI
https://doi.org/10.1021/acs.nanolett.6c03860
Primary Topic
Transition Metal Oxide Nanomaterials
Type
article
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Experimental Development of a Radiative Thermal Memristor

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article

Experimental Development of a Radiative Thermal Memristor

Frédéric Dumas-Bouchiat, Juan José Alvarado-Gil, Mónica Monserrat Martínez Garcia, Mohamed Amir Chaker, Bharathi Rajeswaran, Fernando Cervantes-Alvarez, José Ordoñez-Miranda, Adriana Paola Franco-Bacca, Corinne Champeaux, Irving Alonzo-Zapata, Jose Abraham Chan Espinoza, Ruben Medina Esquivel
article en

Abstract

Abstract We report the experimental realization of a radiative thermal memristor made of a 200-nm-thick VO2 film exchanging heat by far-field radiation with a heat-flux sensor. This two-terminal device exploits the metal–insulator transition and thermal hysteresis of VO2, exhibiting large emissivity variations and a hysteresis width of 5 K around the mean temperature T0 = 338.7 K. Under low-frequency sinusoidal modulation of the VO2 temperature around T0, we observe a pinched, infinity-shaped Lissajous curve for the heat flux versus temperature difference. From this characteristic curve we extract a history-dependent thermal memristance with clear ON and OFF states defined by the emissivity contrast between its insulating and metallic phases. These memristive states remain robust over multiple cycles, enabling binary information encoding in a purely radiative configuration. Our results demonstrate the operation of a contactless thermal memristor and provide a fundamental element for thermal memories, thermal neurons, and neuromorphic networks analogous to their electrical counterparts.

Nano Letters
Centre National de la Recherche Scientifique (FR), Institut National de la Recherche Scientifique (CA), Sorbonne Université (FR), Centre National pour la Recherche Scientifique et Technique (CNRST) (MA), Institut des NanoSciences de Paris (FR), Indian Institute of Science Bangalore (IN), Universitat Politècnica de València (ES), Université de Limoges (FR), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (MX)
Affordable and clean energy
Openalex Percentile: Top 24%
Transition Metal Oxide Nanomaterials
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