Progress and Perspectives of β-Ga2O3 Power Transistors

This review introduced selected experimental and numerical studies of β-Ga2O3 power field-effect transistors, with emphasis on lateral and vertical metal–oxide–semiconductor field-effect transistors (MOSFETs), heterojunction devices, and superjunction-related concepts. Device classes are distinguished by a gate control, current-flow direction, and charge-compensation mechanism. Diode and capacitor studies are also included because they form transistor contacts and gate stacks. Four benchmark tables organize 30 device configurations, separating fabricated devices from numerical concepts and retaining source-specific resistance normalization, operating conditions, and evidence limitations. The synthesis links reported performance gains to their conduction, interface, and thermal costs. Intrinsic material estimates, measured device capabilities, and projected circuit benefits are assessed separately. Incomplete normalization and parameter pairing constrain cross-study comparisons, while dynamic resistance, gate-stack lifetime, electrothermal failure, and reproducibility remain architecture-dependent validation needs. Static breakdown voltage alone does not establish switching performance, manufacturing yield, or commercialization readiness. This review will help our theoretical understanding of β-Ga2O3 power MOSFETs as well as the development trends of β-Ga2O3 power application schemes.