Effects of Ar+-irradiation energy on memristive properties of monocrystalline LiNbO3 thin film memristor

Memristors have emerged as promising candidates for next-generation neuromorphic computing. However, achieving precise and reliable modulation of memristive behavior remains a critical challenge, particularly in oxide-based memristors where defect engineering and the correlation between defect states and resistance switching mechanisms are difficult to control. In this work, we systematically regulate the memristive characteristics of monocrystalline LiNbO3 thin film memristors by tuning the Ar+-irradiation energy. The conductance plasticity of the device was modulated. Lower conductance and higher repeatability of conductance plasticity were successfully achieved in the memristor with lower Ar+-irradiation energy. Effects of Ar+-irradiation energy on memristive characteristics were analyzed. The resistance switching mechanism model of the memristors was established. This work provides an effective strategy for defect engineering in oxide memristors and advances the understanding of the relationship between Ar+-irradiation-induced defects and memristive behavior.